Mura quantification method based on excimer laser annealing

Abstract

The invention discloses a Mura quantification method based on excimer laser annealing, and the method comprises the following steps: S1, obtaining Mura images of different regions of the same substrate after excimer laser annealing under the conditions of the same illumination and the same exposure time; s2, performing image processing on the obtained Mura image; and S3, analyzing the image subjected to the image processing into a gray scale intensity standard deviation to perform Mura quantization. In the present invention, the gray scale strength standard deviation is creatively used for carrying out quantitative evaluation on the Mura; the quality of the polycrystalline silicon after the excimer laser annealing process can be quantitatively judged; the defect of subjective feeling evaluation of human eyes is overcome; the judgment of the Mura has a unified standard and a quantifiable index, the product quality deviation caused by artificial subjective factors is reduced, the strictcontrol of the product quality is facilitated, the quality parameters of the polycrystalline silicon after the excimer laser annealing process can be more scientifically and objectively judged, and the method has important application significance.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for quantifying Mura based on excimer laser annealing. Background technique [0002] Low Temperature Polysilicon (LTPS) thin film due to its atomic arrangement rules, high carrier mobility (10-300cm2 / Vs), when used in other electronic components, can make TFT have a higher drive current, Therefore, the LTPS film is widely used as the material of the active layer, one of the core structures of the TFT, in the manufacturing process of the TFT. At present, in the modern TFT manufacturing process, the method of Excimer laser annealing (ELA) is mostly used to form the polysilicon active layer. Among them, the ELA method mainly irradiates the amorphous silicon film with a certain energy excimer laser, and uses the energy of the laser beam to transform the amorphous silicon into LTPS at high temperature. The polysilicon TFT formed by ELA has the advantage of high mobility. ...

AI Technical Summary

Problems solved by technology

However, due to the instability of the laser energy used and the inhomogeneity of the energy at different positions of the beam, the obtained polysilicon crystallization rate, grain size and internal defect density will be different.

These differences are closely related to the threshold voltage (Vth) and mobility of TFTs, and when reflected in OLED displays, uneven luminance (Mura) will appear

[0003] At present, most of the Mura inspections based on excimer laser annealing are not out of the manual inspection stage, and trained workers directly observe to determine whether the display panel has uneven brightness defects

However, due to the high cost of manual inspection and the long inspection time, only sampling inspections can be carried out, and the manual judgment standards are different, and there is no unified quantitative standard for judgment. Eye fatigue, these shortcomings have become important problems that limit the production efficiency of the production line and the improvement of detection accuracy

At the same time, the accuracy of manual detection is uncontrollable, the reliability is relatively low, and the efficiency is low

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