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Magnetic tunnel junction read circuit, device and method for reading magnetic tunnel junction

A technology of magnetic tunnel junction and reading circuit, which is applied in the direction of magnetic field-controlled resistors, static memory, instruments, etc., and can solve the problem of sacrificing MTJ writing performance

Active Publication Date: 2020-05-08
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the read, write, and hold characteristics of MTJs are intertwined, optimizing MTJs to contain the read disturb problem usually sacrifices MTJ write performance

Method used

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  • Magnetic tunnel junction read circuit, device and method for reading magnetic tunnel junction
  • Magnetic tunnel junction read circuit, device and method for reading magnetic tunnel junction
  • Magnetic tunnel junction read circuit, device and method for reading magnetic tunnel junction

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Embodiment Construction

[0011] The MTJ resistance depends on the relative magnetization orientation of the free layer with respect to the reference layer. The MTJ has the lowest resistance in the parallel state ("state") and the maximum resistance in the antiparallel state ("AP state"). When reading the MTJ resistance, current is passed vertically through the MTJ, and one or more current values ​​or voltage drops across the MTJ are sensed to detect the state of the MTJ. In order to reliably detect a voltage drop, for example by a capacitor charging based method or a capacitor discharging based method, the read current cannot be reduced arbitrarily, since the low current makes it difficult to sense the difference between the low current and the reference value. Meanwhile, a large read current may increase the read disturb rate.

[0012] The disclosed MTJ readout circuit includes a current steering element coupled to a readout path. The current steering element splits the larger current into at least...

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Abstract

The disclosed MTJ read circuits include a current steering element coupled to the read path. At a first node of the current steering element, a proportionally larger current is maintained to meet therequirements of a reliable voltage or current sensing. At a second node of the current steering element, a proportionally smaller current is maintained, which passes through the MTJ structure. The current at the first node is proportional to the current at the second node such that sensing the current at the first node infers the current at the second node, which is affected by the MTJ resistancevalue. The embodiment of the invention relates to a magnetic tunnel junction read circuit, a device and a method for reading the magnetic tunnel junction.

Description

technical field [0001] Embodiments of the present application relate to magnetic tunnel junction reading circuits, devices and methods for reading magnetic tunnel junctions Background technique [0002] Magnetoresistive Random Access Memory ("MRAM") is a promising non-volatile data storage technology. At the heart of an MRAM memory cell (or "bit") is a magnetic tunnel junction ("MTJ"), in which a dielectric layer is sandwiched between a magnetically pinned layer ("reference layer") and a magnetically free layer ("free layer"), The magnetization polarity of the magnetic free layer can be changed. Due to the tunnel magnetoresistance effect, the resistance value between the reference layer and the free layer changes as the magnetization polarity switches in the free layer. Parallel magnetization ("P state") results in lower resistance, while antiparallel magnetization ("AP state") results in higher resistance. The two states of the resistance value are considered as the two ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16
CPCG11C11/1693G11C11/165G11C11/1673G11C11/161G11C7/06H10N50/10
Inventor 葛雷维·古帕塔亚吴志强王奕
Owner TAIWAN SEMICON MFG CO LTD