Trench MOSFET structure and manufacturing method thereof

A trench and floating area technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to reduce the effect of breakdown voltage

Active Publication Date: 2020-05-08
HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in traditional trench MOSFET devices, there is a problem of mutual constraints between breakdown voltage and on-resistance. Usually, the improvement of breakdown voltage and the reduction of on-resistance cannot be achieved at the same time, and a good compromise needs to be obtained. , it will lead to a large energy loss when the device works at a large voltage

Method used

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  • Trench MOSFET structure and manufacturing method thereof
  • Trench MOSFET structure and manufacturing method thereof
  • Trench MOSFET structure and manufacturing method thereof

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Embodiment Construction

[0035] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0036] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0037] If it is to describe the situation directly on another layer or an...

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Abstract

The invention discloses a trench MOSFET structure and a manufacturing method thereof. The semiconductor device comprises: a semiconductor layer of a first doping type; a trench extending from an uppersurface of the semiconductor layer to an interior thereof; an insulating layer and an electrode conductor which are positioned in the groove; a body region of a second doping type located in an upperregion, adjacent to the trench, of the semiconductor layer and adjacent to the trench; and a floating region of the first doping type which is located at a predetermined position, adjacent to the twosides of the trench, of the semiconductor layer, wherein the floating region is located below the body region and is not in contact with the body region. According to the trench MOSFET structure provided by the invention, the on resistance of the trench MOSFET structure is reduced under the condition that the influence on the breakdown voltage of the trench MOSFET structure is relatively small.

Description

technical field [0001] The present invention relates to semiconductor technology, and more particularly, to a trench MOSFET structure and a method for manufacturing the trench MOSFET. Background technique [0002] Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been widely used as power semiconductor devices, for example as switches in power converters. However, in traditional trench MOSFET devices, there is a problem of mutual constraints between breakdown voltage and on-resistance. Usually, the improvement of breakdown voltage and the reduction of on-resistance cannot be achieved at the same time, and a good compromise needs to be obtained , which will lead to a large energy loss when the device works at a large voltage. Contents of the invention [0003] In view of this, the object of the present invention is to provide a trench MOSFET structure and its manufacturing method, so as to reduce its on-resistance without affecting the breakdown voltage of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/06
CPCH01L29/78H01L29/7841H01L29/66477H01L29/0603H01L29/0684H01L29/7813H01L29/407H01L29/41766H01L29/0878H01L29/66734H01L29/401H01L29/41775H01L29/4236
Inventor 王加坤
Owner HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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