Photoelectric detector

Abstract

The embodiment of the invention discloses a photoelectric detector, and the photoelectric detector comprises a silicon layer which comprises a doped region of a first doping type; a germanium layer incontact with the silicon layer, wherein the germanium layer comprises a doped region of a second doping type; a first layer of waveguide, wherein the first layer of waveguide comprises a first detection coupling region arranged above the germanium layer; a second layer of waveguide which comprises a second detection coupling region arranged on the side surface of the germanium layer, wherein thefirst layer of waveguide and the second layer of waveguide are used for transmitting optical signals, and the first layer of waveguide and the second layer of waveguide are used for coupling the optical signals to the germanium layer through the first detection coupling region and the second detection coupling region respectively, and the germanium layer is used for detecting the optical signal and converting the optical signal into an electric signal.

Description

technical field [0001] The embodiments of the present application relate to the technical field of photodetectors, and in particular to a photodetector. Background technique [0002] Silicon photonics technology is a new generation of optical device development and integration based on silicon and silicon-based substrate materials (such as SiGe / Si, silicon-on-insulator, etc.) using existing complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) technology technology. Silicon photonics technology combines the characteristics of ultra-large-scale and ultra-high-precision manufacturing of integrated circuit technology with the advantages of ultra-high speed and ultra-low power consumption of photonic technology. It is a disruptive technology to cope with the failure of Moore's Law. This combination benefits from the scalability of semiconductor wafer fabrication, thereby reducing costs. As one of the core devices of silicon photonics architect...

AI Technical Summary

Problems solved by technology

However, the energy band structure of crystalline silicon materials determines that its detection efficiency in the optical communication band is very low. Although III-V semiconductor materials are more suitable for photodetectors, III-V semiconductor materials are not compatible with silicon technology and cannot be used with silicon Carry out effective monolithic integration; Considering the compatibility of germanium material and CMOS process, the technology of using germanium material as light absorbing layer material to form germanium silicon photodetector has been proposed in this field

However, the current silicon germanium photodetectors have the disadvantages of obvious saturated absorption effect and low responsivity, so further improvement is needed

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