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High-sensitivity nanowire acceleration sensor

An acceleration sensor, high-sensitivity technology, applied in the direction of acceleration measurement using inertial force, nanotechnology, nanotechnology, etc., can solve the problems of slender nanowire structure, and achieve the effect of easy deformation, small size, and low power consumption

Active Publication Date: 2020-05-15
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the nanowire structure is slender, and how to apply an external force to the bridging nanowire to prepare a nanowire acceleration sensor with excellent performance is still a challenge.

Method used

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  • High-sensitivity nanowire acceleration sensor
  • High-sensitivity nanowire acceleration sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Such as figure 1 with figure 2 Shown as follows: First, using chemical vapor deposition (CVD) technology, an n-type GaN conductive layer with a thickness of 1-10 microns is grown on the surface of the sapphire substrate 4, and then the groove 3 is etched on the surface of the substrate 4. The groove 3 penetrates the conductive layer, so that the conductive layer is separated into a conductive layer a1 and a conductive layer b2 (that is, the conductive layer a1 and the conductive layer b2 are distributed on both sides of the groove 3, and the two are electrically insulated).

[0025] Secondly, GaN nanowires 5 are bridged and grown on the sidewalls of the groove 3. The nanowire 5 is in a suspended state and serves as a conductive channel for the conductive layer a1 and the conductive layer b2 on both sides of the groove 3, and connects the conductive layer a1 and the conductive layer b2 on both sides of the groove 3.

[0026] Next, the conductive layer 1a on the side of the g...

Embodiment 2

[0030] Such as figure 1 with Figure 5 Shown as follows: First, using chemical vapor deposition (CVD) technology, an n-type silicon conductive layer with a thickness of 1-10 microns is grown on the surface of the sapphire substrate 4, and then the groove 3 is etched on the surface of the substrate 4. The groove 3 penetrates the conductive layer, so that the conductive layer is separated into mutually insulated conductive layers a 3 1-3, conductive layer a 4 1-4, conductive layer a 5 1-5 and conductive layer a 6 1-6. Among them, the conductive layer a 3 1-3 and conductive layer a 4 1-4 are distributed on the opposite sides of annular groove 6, conductive layer a 5 1-5 and conductive layer a 6 1-6 are distributed on the other opposite sides of the annular groove 6.

[0031] Secondly, GaN nanowires are bridged and grown on the sidewalls of the annular groove 6 b 1 8-1 and nanowire b 2 8-2, the nanowire is suspended. Among them, nanowire b 1 8-1 Connect the conductive layer a 5 1-5 ...

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Abstract

The invention provides a high-sensitivity nanowire acceleration sensor, which is characterized in that a bridge connection nanometer line forms a U-shaped loop, and an electrode region at one end is in a suspended state. The bridge connection nanometer line form a cross structure, and a mass block is attached to the middle of the bridge connection nanometer line. The sensor provided by the invention has the characteristics of miniaturization, integration and high sensitivity.

Description

Technical field [0001] The invention relates to a high-sensitivity nanowire acceleration sensor for detecting external acceleration. Background technique [0002] Strain gauge-based micro-cantilever sensors are widely used to detect acceleration. Its working principle is: acceleration generates external force on the mass, and the external force is transmitted to the cantilever strain gauge through the mass block, so that the strain gauge deforms and changes the resistance. Acceleration is obtained by detecting changes in resistance (Sensors and Actuators A, 281, 156-175, 2018). [0003] In order to achieve miniaturization and high sensitivity of the sensor, it is necessary to reduce the size of the strain gauge. Semiconductor nanowires are the smallest conductive path, and tiny external forces can deform nanowires, so they have high sensitivity. [0004] However, the preparation process of semiconductor nanowires is complicated and requires steps such as stripping, alignment, assem...

Claims

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Application Information

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IPC IPC(8): G01P15/12B82Y30/00
CPCB82Y30/00G01P15/12
Inventor 黄辉蔡伟成李志瑞赵剑刘蓬勃王岩赵丹娜
Owner DALIAN UNIV OF TECH
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