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Perovskite light emitting diode

A light-emitting diode and perovskite technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems affecting light-emitting efficiency, light loss, etc., and achieve the effect of improving light-emitting efficiency, improving life and reliability, and high efficiency

Inactive Publication Date: 2020-05-15
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method is to place the perovskite film in the mirror cavity, and the reflection of light in the mirror cavity will affect the light extraction efficiency and cause part of the light loss.

Method used

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  • Perovskite light emitting diode
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  • Perovskite light emitting diode

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Effect test

Embodiment 1

[0033] A perovskite light-emitting diode structure, from the bottom to the top structure is a substrate 1, a P-type electrode 2, a hole transport layer 3, a perovskite active light-emitting region 4, an electron transport layer 5, a mirror layer 6, The protective layer 7, the N-type electrode 8, the P-type electrode 2 is prepared on the substrate, the N-type electrode 8 is prepared on the protective layer, and an air channel 9 is left between a plurality of N-type electrodes 8; the P-type electrode 2 and the N-type The electrodes 8 are respectively connected to the positive pole and the negative pole of the external power supply.

[0034] In this embodiment, the substrate 1 is made of glass material; the thickness is 0.5 mm; the P-type electrode 2 is made of ITO material; prepared by spin coating; the thickness is 100 nm; the hole transport layer 3 is made of PEDOT:PSS; prepared by spin coating The thickness is 50nm; the perovskite active light-emitting region 4 is made of per...

Embodiment 2

[0036] A perovskite light-emitting diode structure, from the bottom to the top structure is a substrate 1, a P-type electrode 2, a hole transport layer 3, a perovskite active light-emitting region 4, an electron transport layer 5, a mirror layer 6, The protective layer 7, the N-type electrode 8, the P-type electrode 2 is prepared on the substrate, the N-type electrode 8 is prepared on the protective layer, and an air channel 9 is left between a plurality of N-type electrodes 8; the P-type electrode 2 and the N-type The electrodes 8 are respectively connected to the positive pole and the negative pole of the external power supply.

[0037] In this embodiment, the substrate 1 is made of glass material; the thickness is 1 mm; the P-type electrode 2 is made of ITO material; it is prepared by spin coating; the thickness is 150 nm; the hole transport layer 3 is made of TFB; it is prepared by spin coating; 100nm; the perovskite active light-emitting region 4 is made of two-dimensiona...

Embodiment 3

[0039] A perovskite light-emitting diode structure, from the bottom to the top structure is a substrate 1, a P-type electrode 2, a hole transport layer 3, a perovskite active light-emitting region 4, an electron transport layer 5, a mirror layer 6, The protective layer 7, the N-type electrode 8, the P-type electrode 2 is prepared on the substrate, the N-type electrode 8 is prepared on the protective layer, and an air channel 9 is left between a plurality of N-type electrodes 8; the P-type electrode 2 and the N-type The electrodes 8 are respectively connected to the positive pole and the negative pole of the external power supply.

[0040] In this embodiment, the substrate 1 is made of glass material; the thickness is 0.75 mm; the P-type electrode 2 is made of ITO material; it is prepared by spin coating; the thickness is 150 nm; the hole transport layer 3 is PVK; it is prepared by spin coating; 75nm; the perovskite active light-emitting region 4 is made of three-dimensional pe...

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Abstract

The invention discloses a perovskite light emitting diode. The perovskite light emitting diode sequentially comprises a substrate, a P-type electrode, a hole transport layer, a perovskite active light-emitting region, an electron transport layer, a reflector layer, a protective layer and N-type electrodes from bottom to top, wherein the P-type electrode is prepared on the substrate, the N-type electrodes are prepared on the protective layer, air channels are reserved among the multiple N-type electrodes, and the P-type electrode and the N-type electrodes are externally connected with a positive electrode and a negative electrode of a power supply respectively. According to the perovskite light-emitting diode disclosed by the invention, the light generated by the perovskite active light-emitting region is reflected by the reflector layer after passing through the electron transport layer and is transmitted through the substrate, so that the light is effectively prevented from being absorbed after passing through the electron transport layer or being transmitted through a top electrode, and the light extraction efficiency of the perovskite light-emitting diode can be greatly improved.

Description

technical field [0001] The invention relates to a light emitting diode, in particular to a perovskite light emitting diode. Background technique [0002] Perovskite light-emitting diodes (PeLEDs) are based on perovskite materials (the general formula is ABO 3 ) as a light-emitting layer material, has a structure similar to a "sandwich", and the diodes prepared by conventional methods such as evaporation method, one-step method (solution spin coating), two-step method (sequential deposition), scrape coating method and gas phase assisted solution method device. The general structure is composed of a bottom electrode, an electron transport layer, a light emitting layer, a hole transport top layer and a top electrode. Its light-emitting principle is similar to that of organic light-emitting diodes, which can be summarized as follows: holes and electrons generated by P-type electrodes and N-type electrodes are transported to the light-emitting layer through the transport layer ...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/54H01L51/56
CPCH10K85/30H10K50/822H10K50/856H10K50/87H10K71/00
Inventor 康汝燕左致远张子琦
Owner SHANDONG UNIV
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