Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Immersion type diamond linear cutting crystalline silicon and cooling lubricating method

A diamond wire cutting, cooling and lubrication technology, applied in the direction of fine working devices, manufacturing tools, stone processing equipment, etc., can solve the limited, cutting quality and processing efficiency limitations, can not guarantee the cooling and lubrication effect, etc., to achieve innovation Strong, good lubricating and cooling effect

Inactive Publication Date: 2020-05-22
QINGDAO GAOCE TECH CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the kerf is extremely small, and the ability of the cutting fluid to be brought into the cutting area in the thin line is relatively limited, and sufficient cooling and lubrication effects cannot be guaranteed. limit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Immersion type diamond linear cutting crystalline silicon and cooling lubricating method
  • Immersion type diamond linear cutting crystalline silicon and cooling lubricating method
  • Immersion type diamond linear cutting crystalline silicon and cooling lubricating method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution of the present invention is clearly and completely described below in conjunction with the accompanying drawings of the present invention. Based on the embodiments in this application, those of ordinary skill in the art will Other similar embodiments obtained without creative work shall all fall within the scope of protection of this application. In addition, the directional words mentioned in the following embodiments, such as "upper", "lower", "left", "right", etc., are only referring to the directions of the drawings, therefore, the directional words used are for illustration rather than limitation invent.

[0026] The present invention will be further described below in conjunction with the accompanying drawings and preferred embodiments.

[0027] Such as Figure 1-3 As shown, an immersion tank is arranged between two parallel cutting...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an immersion type diamond linear cutting crystalline silicon and a cooling lubricating method, and belongs to the field of crystalline silicon machining. A diamond line is immersed into a cutting solution for cutting crystalline silicon, the cutting solution enters a cutting region, the cutting region is cooled and lubricated, the cutting solution is immersed into an immersion groove, the diamond line runs through the immersion groove and is immersed into the cutting solution to cut the crystalline silicon, the cutting solution is brought into the cutting region, cuttings brought out by the cutting region are discharged from a discharge outlet below the immersion groove, the immersion groove is formed below the diamond line net and comprises a side wall and a groove bottom connected with the side wall. The side wall and the groove bottom form a space containing the cutting solution. A line groove through which the diamond line is allowed to penetrate is formedin the upper portion of the corresponding side wall of the diamond line. The crystalline silicon cut by adopting the method is better in surface roughness quality, particularly, the surface roughnessis better under the high production rate such as the high feeding rate, the product quality of the crystalline silicon is remarkably improved, the cost is low, the concept is exquisite, and the application prospect is wide.

Description

technical field [0001] The invention belongs to the field of crystal silicon processing, and in particular relates to a submerged diamond wire cutting crystal silicon and a cooling and lubricating method. Background technique [0002] Crystalline silicon is an important part of solar panels to achieve photoelectric conversion, and it needs to be processed through multiple processes to become a standard crystalline silicon wafer. During the processing of crystalline silicon, processing efficiency and cutting quality are the main concerns in the field of single / multi-wire diamond wire sawing. In the traditional processing process, spraying is used as the main cooling method. The traditional nozzle spraying and pouring methods can reduce the temperature of the cutting area to a certain extent and wash away the chips. It can be as low as 50μm, and the single line cut-off can also reach below 120μm. Therefore, the kerf is extremely small, and the ability of the cutting fluid to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B28D7/02B28D7/00
CPCB28D5/0064B28D5/0076B28D5/045
Inventor 仇健张善保葛任鹏
Owner QINGDAO GAOCE TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products