Atomic layer deposition process control method for corrosive and hazardous gaseous precursors

An atomic layer deposition and process control technology, applied in gaseous chemical plating, coating, metal material coating process, etc., to reduce safety hazards, prolong contact reaction time, and reduce cost of use

Active Publication Date: 2020-05-22
XIAN MODERN CHEM RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The present invention proposes a method for controlling the atomic layer deposition process of corrosive and dangerous gaseous precursors to solve how to realize the precise control of the amount of corrosive and dangerous gaseous precursors in the process of atomic layer deposition and reduce the cost of such precursors. Use safety hazards, reduce environmental pressure and use cost technical issues

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  • Atomic layer deposition process control method for corrosive and hazardous gaseous precursors
  • Atomic layer deposition process control method for corrosive and hazardous gaseous precursors
  • Atomic layer deposition process control method for corrosive and hazardous gaseous precursors

Examples

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Embodiment 1

[0046] This example proposes a process control method for atomic layer deposition of corrosive and dangerous gaseous precursors. The prepared film is W, and the two corrosive and dangerous gaseous precursors used are Si respectively. 2 h 6 and WF 6 , the substrate material is a silicon wafer, and the atomic layer deposition temperature is 220°C. Such as image 3 As shown, the method specifically includes the following steps:

[0047] Step S1: Open the upstream pneumatic valve 2 of the first-type gaseous precursor capacity-adjustable device 1, and inject the first-type gaseous precursor from the first-type precursor storage 3 into the first-type gaseous precursor capacity-adjustable device 1 Si 2 h 6 , the time is t1=2s. Among them, the capacity-adjustable device is a pipeline device that can be precisely regulated for the space volume of a small amount of precursor temporarily stored, and the space volume range of the capacity-adjustable device is 10 -1 cm 3 ~10 3 cm ...

Embodiment 2

[0058] This example proposes a process control method for atomic layer deposition using corrosive and dangerous gaseous precursors to prepare doped films. The prepared doped films are W / Al 2 o 3 , the two corrosive and dangerous gaseous precursors used are WF 6 and Si 2 h 6 , and the other two doping precursors are trimethylaluminum TMA and H 2 O, the base material is a silicon wafer, and the atomic layer deposition temperature is 200°C. Such as Image 6 As shown, the method specifically includes the following steps:

[0059] Step S1: Open the pneumatic valve 16 for injecting the first doped precursor, close the pipeline vacuum pump pumping pneumatic valve 5 in the atomic layer deposition system, and inject the first doped precursor into the ALD reaction chamber 9 from the reservoir 17 of the first doped precursor. A dopant precursor TMA undergoes flow dynamic diffusion adsorption reaction on the surface of the substrate 11 for 5 s.

[0060] Step S2: Close the pneumatic...

Embodiment 3

[0076] This embodiment provides a method for controlling the atomic layer deposition process of a corrosive and dangerous gaseous precursor. The prepared film is GaN, and the two corrosive and dangerous gaseous precursors used are respectively Ga(CH 3 ) 3 and NH 3 , the substrate material is molecular sieve MCM-41, and the atomic layer deposition temperature is 400°C. The method specifically includes the following steps:

[0077] Step S1: Open the upstream pneumatic valve 2 of the first-type gaseous precursor capacity-adjustable device 1, and inject the first-type gaseous precursor from the first-type precursor storage 3 into the first-type gaseous precursor capacity-adjustable device 1 Ga(CH 3 ) 3 , the time is 8s.

[0078] Step S2: Close the upstream pneumatic valve 2 of the first gaseous precursor capacity adjustable device 1, close the pipeline carrier gas purge pneumatic valve 4, pipeline vacuum pump pneumatic valve 5 in the atomic layer deposition system, and ALD rea...

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Abstract

The invention provides an atomic layer deposition process control method for corrosive and hazardous gaseous precursors. Precise control and safe ordered injection of the gaseous precursors are realized. A gaseous precursor capacity adjustable device is additionally arranged between two precursor injection pneumatic valves, the injection amount of the precursors is accurately controlled, and a precursor injection pneumatic valve, a vacuum pump air exhaust pneumatic valve and a carrier gas purging pneumatic valve are opened and closed in order through valves, so that atomic layer deposition processes such as alternate and ordered injection and quasi-static diffusion adsorption reaction and removal of excessive precursors and reaction products are realized respectively. The atomic layer deposition process control method can realize the accurate control of the amount of the corrosion and dangerous gaseous precursors in the atomic layer deposition process, reduce the use potential safety hazard of the precursors, and reduce the environmental pressure and the use cost.

Description

technical field [0001] The invention belongs to the technical field of atomic layer deposition, and in particular relates to a method for controlling the atomic layer deposition process of corrosive and dangerous gaseous precursors. Background technique [0002] Atomic Layer Deposition (ALD) is a technology based on a self-limiting growth method to prepare nano-films. It has low growth temperature, good shape retention, atomic-level thickness control ability, and almost stoichiometric element composition. Excellent characteristics. This technology achieves controllable film growth with atomic-level precision by periodically controlling the chemical reaction between the gaseous reactant precursor and the surface saturation of the substrate material. In the atomic layer deposition process, each deposition cycle consists of two self-limiting reactions, usually divided into first precursor injection, purge excess precursor and product, second precursor injection and purge exces...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/52
CPCC23C16/45553C23C16/45559C23C16/52
Inventor 冯昊秦利军张王乐龚婷李建国惠龙飞
Owner XIAN MODERN CHEM RES INST
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