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Method for forming flash memory device

A technology of flash memory device and storage area, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., and can solve problems such as polysilicon peeling off

Active Publication Date: 2020-05-26
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a method for forming a flash memory device to solve the problem of defects caused by polysilicon peeling

Method used

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  • Method for forming flash memory device
  • Method for forming flash memory device
  • Method for forming flash memory device

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Embodiment Construction

[0027] The method for forming the flash memory device proposed by the present invention will be further described in detail below with reference to the drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0028] Please refer to figure 1 , which is a schematic flowchart of a method for forming a flash memory device provided by a specific embodiment of the present invention. Such as figure 1 As shown, the forming method of the flash memory device includes:

[0029] Step S1: providing a semiconductor substrate, the semiconductor substrate includes a peripheral area and a storage area, a structural layer and a nitride layer are formed on the semiconductor substrate of the stor...

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Abstract

The invention provides a method for forming a flash memory device, which comprises the steps of forming a patterned photoresist layer, and covering the exposed parts of a semiconductor substrate, a structural layer and a first polycrystalline silicon layer by using the patterned photoresist layer; then removing part of the first polycrystalline silicon layer and part of the thickness of the secondpolycrystalline silicon layer; further, removing part of the patterned photoresist layer so as to expose a structural layer; and removing part of the structural layer and the remaining second polycrystalline silicon layer. Therefore, the second polycrystalline silicon layer is removed through a twice removing method, so that the residue of the second polycrystalline silicon layer is avoided, thepeeling of the residual second polycrystalline silicon layer in the subsequent process is further avoided, and the defects are further avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a flash memory device. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits, and digital / analog hybrid circuits. Among them, memory is an important type of digital circuits. In memory, the development of flash memory (flash memory, referred to as flash memory) is particularly rapid in recent years. The main feature of flash memory is that it can keep storing information for a long time without power on, and has the advantages of high integration, fast storage speed, easy erasing and rewriting, etc. Therefore, it has been widely used in many fields such as microcomputers and automatic control. Wide range of applications. In the existing method for forming a flash memory device, the polysilicon remaining on the semiconductor substrat...

Claims

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Application Information

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IPC IPC(8): H01L27/11521H01L27/11531
CPCH10B41/42H10B41/30
Inventor 周海洋沈思杰
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP