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Method for coating silicon carbide on graphite substrate

A technology of graphite substrate and coating method, applied in the field of silicon carbide coating, can solve problems such as handling difficulties, and achieve the effects of economical production, high durability and improved safety

Inactive Publication Date: 2020-06-02
卡博尼克斯有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the supply source of Si used in the chemical vapor reaction method (CVR), because SiH 4 Very flammable high-pressure gas that can spontaneously ignite in the absence of an external ignition source in air, so its handling is very difficult, while other sources of supply have the ability to form HCl or Cl as a by-product 2 The problem

Method used

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  • Method for coating silicon carbide on graphite substrate
  • Method for coating silicon carbide on graphite substrate
  • Method for coating silicon carbide on graphite substrate

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Embodiment Construction

[0026] Next, the present invention will be described in more detail with reference to the drawings and embodiments. However, the following drawings and examples are merely exemplary contents for explaining the content and scope of the technical idea of ​​the present invention, and the technical scope of the present invention is not limited or changed accordingly. Relevant practitioners can perform various modifications or changes within the scope of the technical idea of ​​the present invention on the basis of the following exemplary contents.

[0027] As described above, the present invention relates to a silicon carbide coating method for a graphite substrate, which is characterized in that: after the graphite substrate and solid silicon (Si) for forming the coating are put into a vacuum chamber, the Heat treatment at 2,000°C.

[0028] Silicon has a melting point of 1414°C and a boiling point of 3265°C at room temperature, but when the pressure decreases, the boiling point ...

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Abstract

The invention relates to a silicon carbide coating method of a graphite base material. The present invention relates to a silicon carbide coating method capable of economically forming a silicon carbide coating on a substrate made of a graphite material by using a device having a simple structure and a raw material having excellent safety through simple engineering, particularly to a method for coating silicon carbide on a graphite substrate, wherein heat treatment is performed at 1200-2000 DEG C after a graphite substrate for forming a coating layer and solid silicon are introduced into a vacuum chamber.

Description

technical field [0001] The present invention relates to a silicon carbide coating method capable of economically forming a silicon carbide coating on a graphite base material by using a device with a simpler structure and a raw material with higher safety. Background technique [0002] Because silicon carbide (SiC) has excellent chemical resistance, oxidation resistance, heat resistance and wear resistance, it can be coated on the surface of materials such as metals, ceramics or graphite to improve the physical properties of materials. The above-mentioned silicon carbide coating is widely used in various fields such as reinforced composite materials, new aerospace materials, high-temperature reflective materials, and semiconductor manufacturing engineering tools. [0003] For example, in the manufacturing process of semiconductors, wafers, which are processing objects, are supported by susceptors that provide support for the wafers during the process of moving and stacking, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/87
CPCC04B41/009C04B41/5059C04B41/87C04B35/522C04B41/4556C04B41/4501
Inventor 金锡津
Owner 卡博尼克斯有限公司
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