Unlock instant, AI-driven research and patent intelligence for your innovation.

Metrology apparatus, lithography system and method for measuring structures

A technology for measuring equipment and optical systems, applied in measuring devices, optomechanical equipment, microlithography exposure equipment, etc., can solve problems such as difficulty in obtaining sensitivity

Active Publication Date: 2022-01-21
ASML NETHERLANDS BV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to obtain sufficient sensitivity in these measurements, especially if the layer separation is not very small

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metrology apparatus, lithography system and method for measuring structures
  • Metrology apparatus, lithography system and method for measuring structures
  • Metrology apparatus, lithography system and method for measuring structures

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] This specification discloses one or more embodiments of the features of the present invention. The disclosed embodiments will exemplify the invention. The scope of the invention is not limited to the disclosed embodiments. The invention is defined by the appended claims.

[0030] The described embodiments may include specific features, structures, or properties, including specific features, structures, or properties, such as "One Embodiment", Example, Example Embodiment, and the like. Examples may not include the specific features, structures, or characteristics. In addition, these phrases do not necessarily refer to the same embodiment. Additionally, when specific features, structures, or properties are described in connection with embodiments, it is understood that such features, structures, or characteristics are within the scope of the scope of those skilled in the art, whether or not they are explicitly described.

[0031] However, before describing these embodiments i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A metrology apparatus is disclosed comprising an optical system for focusing radiation onto the structure and directing reflected radiation from the structure to a detection system, the optical system being configured to apply a plurality of different shifts of optical properties to radiation before and / or after reflection from the structure such that, relative to reflected radiation derived from a second point of the pupil plane field distribution, a corresponding plurality of Different offsets are provided to the reflected radiation derived from the first point of the pupil plane field distribution; the detection system detects the difference between the reflected radiation derived from the first point of the pupil plane field distribution and the A corresponding plurality of radiation intensities resulting from interference between reflected radiation derived from said second point of said pupil plane field distribution, each radiation intensity corresponding to a different one of said plurality of different offsets .

Description

[0001] Cross-reference related application [0002] The present application claims priority to European Application 17196670.8 submitted on October 16, 2017, and all of the European applications are incorporated herein by reference. Technical field [0003] The present invention relates to a measuring apparatus for measuring a structure formed on a substrate from a photolithography, a photolithography system, and a method of measurement of a structure formed on a substrate from a photolithography process. Background technique [0004] The lithographic apparatus is a machine that applies the desired pattern to the substrate (usually applied to the target portion of the substrate). Light engraving devices can be used, for example, in the manufacturing of integrated circuits (IC). In that case, the pattern forming apparatus (alternatively referred to as a mask or mask version) can be used to generate a circuit pattern to be formed on the single layer of the IC. This pattern can be tr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/70633G03F7/70625G01B9/02083G01B9/0209
Inventor 乔安科·拉文斯卑尔根D·阿克布卢特N·潘迪廉晋
Owner ASML NETHERLANDS BV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More