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A cr doped in 2 the s 3 Intermediate zone material and preparation method thereof

A cr-in2s3, intermediate band technology, used in chemical instruments and methods, gallium/indium/thallium compounds, final product manufacturing, etc. The effect of reducing the intensity of light reflections

Active Publication Date: 2022-02-08
鄂尔多斯应用技术学院
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, no author has analyzed and discussed Cr-doped In theoretically and experimentally. 2 S 3 Material preparation method

Method used

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  • A cr doped in <sub>2</sub> the s <sub>3</sub> Intermediate zone material and preparation method thereof
  • A cr doped in <sub>2</sub> the s <sub>3</sub> Intermediate zone material and preparation method thereof
  • A cr doped in <sub>2</sub> the s <sub>3</sub> Intermediate zone material and preparation method thereof

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Embodiment 1

[0052] For the preparation process, please refer to figure 1 , a Cr-doped In of this embodiment 2 S 3 The preparation method of intermediate zone material, its method step is as follows:

[0053] Step 1: Preparation of In 2 S 3 Material, 99.99% pure; weighs 10 grams. Weighing adopts the electronic balance scale of model BSA124S-CW produced by Sai Duo Kesi Scientific Instrument Co., Ltd.

[0054] Step 2: Preparation of Cr 2 S 3 Material, 99.99% pure; weighs 0.3234 grams. Weighing adopts the electronic balance scale of model BSA124S-CW produced by Sai Duo Kesi Scientific Instrument Co., Ltd.

[0055] Step 3: Put In 2 S 3 and Cr 2 S 3 The mixed material is put into the tank body of the mixer, the rotating speed of the mixer is 20r / min, the mixing time is 10h, the inert gas argon protection is passed into, and then the mixer is used for mixing; the mixed powder is obtained; In 2 S 3 and Cr 2 S 3 The mixed powder samples were put into a vacuum ball mill jar.

[00...

Embodiment 2

[0061] For the preparation process, please refer to figure 1 , a Cr-doped In of this embodiment 2 S 3 The preparation method of intermediate zone material, its method step is as follows:

[0062] Step 1: Preparation of In 2 S 3 Material, 99.99% pure; weighs 100 grams. Weighing adopts the electronic balance scale of model BSA124S-CW produced by Sai Duo Kesi Scientific Instrument Co., Ltd.

[0063] Step 2: Preparation of Cr 2 S 3 Material, 99.99% pure; weighs 3.33 grams. Weighing adopts the electronic balance scale of model BSA124S-CW produced by Sai Duo Kesi Scientific Instrument Co., Ltd.

[0064] Step 3: Put In 2 S 3 and Cr 2 S 3 The mixed material is put into the tank body of the mixer, the rotating speed of the mixer is 50r / min, and the mixing time is 20h, and the inert gas nitrogen protection is passed into, and then the mixer is used for mixing; the mixed powder is obtained; the obtained In 2 S 3 and Cr 2 S 3 The mixed powder samples were put into a vacuu...

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Abstract

The invention discloses a Cr-doped In 2 S 3 The preparation method of intermediate belt material. First weigh In 2 S 3 and Cr 2 S 3 Put the powder sample into a ball mill jar; then add absolute ethanol to the ball mill jar, seal the ball mill jar, and then put the ball mill jar into a ball mill for ball milling; then take out the milled sample and put it into a centrifuge tube for centrifugation, and centrifuge The upper layer of absolute ethanol in the sample is poured out, then dried, then taken out, manually ground, and then put into an annealing furnace for annealing, and after annealing, Cr‑In 2 S 3 Median material. Cr-doped In of the present invention 2 S 3 The preparation method of the intermediate zone material is simple, and the Cr-In is prepared by ball milling combined with annealing treatment. 2 S 3 Light absorbing layer material, each element in the structure conforms to the stoichiometric ratio, the composition elements are evenly distributed, and its light reflection intensity is low, resulting in strong light absorption intensity, and can absorb photogenerated carriers in the infrared region, reducing photogenerated electron-hole pairs complex.

Description

technical field [0001] The invention relates to an intermediate band absorbing layer material in the field of solar cells, specifically a Cr-doped In 2 S 3 intermediate zone material and its preparation method. Background technique [0002] In 2 S 3 It has different phases due to different ambient temperatures. The advantages of this compound are non-toxic, good stability, and superior photoelectric properties. In 2 S 3 It is widely used in the degradation of organic pollutants under standard light, photocatalysis and preparation of solar cells, etc. It is suitable for the preparation of IBSC absorption layer, and is a promising intermediate-band photoelectric absorption material. [0003] to In 2 S 3 There have been some reports on the theoretical and experimental studies of impurity intermediate band materials as the matrix. For example, the existing research team used the spin-optimized density functional theory under the generalized gradient approximation to calc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00H01L31/032H01L31/18
CPCC01G15/00H01L31/0321H01L31/18C01P2002/72C01P2002/82C01P2002/85C01P2002/84C01P2004/03Y02P70/50
Inventor 姚海燕范文亮周晓娟
Owner 鄂尔多斯应用技术学院
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