Temperature adjusting method for improving temperature adjusting efficiency of CZ single crystal furnace

Abstract

The invention discloses a temperature adjusting method for improving the temperature adjusting efficiency of a CZ single crystal furnace. The method comprises the following steps: S1, a preparation stage: S11, connecting a power supply of a heating mechanism with an external power supply, controlling and starting the heating mechanism through a computer program to enable the heating mechanism in the CZ single crystal furnace to perform heating work, and then continuously raising the temperature in the CZ single crystal furnace; s2, a temperature adjustment logic design stage: S21, performing temperature adjustment logic design on program parameters in a computer on the outer side of the CZ single crystal furnace; s3, in the working stage, S31, a hearth temperature sensor detection module in the temperature detection system detects the heating rising temperature value in the CZ single crystal furnace in real time. According to the temperature adjusting method for improving the temperature adjusting efficiency of the CZ single crystal furnace, the whole temperature adjusting process is divided into three stages through the temperature rising overheating logic, the temperature findinglogic and the temperature returning logic, and compared with a traditional one-step temperature returning temperature adjusting method, temperature adjusting is more stable, the working time is shortened, and therefore the temperature adjusting efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of Czochralski single crystal technology, in particular to a temperature adjustment method for improving the temperature adjustment efficiency of a CZ single crystal furnace. Background technique [0002] Single crystal silicon is mainly used to make semiconductor components. The Czochralski single crystal process is heated by resistance. At a suitable temperature, the silicon atoms in the melt will follow the silicon atom arrangement structure of the seed crystal to form regular crystals at the solid-liquid interface. The technology of crystallization, and then pulling the seed crystal upward at a certain speed and rotating the crystal at the same time, when the crystallization speeds up, the crystal diameter will become thicker, increasing the speed can make the diameter thinner, increasing the temperature can keep the crystallization speed, on the contrary, if The crystallization becomes slower and the di...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a temperature adjustment method to improve the temperature adjustment efficiency of CZ single crystal furnace, so as to solve the problem of the above-mentioned background technology, most of the traditional temperature adjustment methods of CZ single crystal furnace on the market directly control the heating mechanism to perform one-step temperature return , this will lead to early or late temperature recovery in the temperature recovery process, resulting in inappropriate temperature adjustment and waste of working hours

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