Semiconductor laser and manufacturing method thereof
A manufacturing method and a technology of lasers, which are applied to semiconductor lasers, lasers, laser parts, etc., can solve problems such as high prices, unfavorable mass production of devices, and difficult processing and production
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Publication Date
- 2021-04-23
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Abstract
Description
technical field
[0001] The invention relates to the field of optoelectronic devices, in particular to a semiconductor laser and a manufacturing method thereof. Background technique
[0002] The near-field spot of waveguides based on compound semiconductor materials is small and asymmetric, resulting in large and asymmetric far-field divergence angles. When the semiconductor device is directly coupled to the optical fiber, the coupling loss can be as high as 10dB due to the mismatch of the mode field between the optical fiber and the semiconductor waveguide, and the alignment tolerance is small, which undoubtedly increases the difficulty and cost of packaging. The mode-spot converter can almost adiabatically convert the asymmetric near-field distribution of the waveguide into a symmetrical input or output near-field, which can improve the coupling efficiency and coupling tolerance of active devices and optical fibers. The horizontal wedge waveguide speckle converter is a sim...
Examples
Embodiment Construction
[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0022] The invention discloses a semiconductor laser and a manufacturing method thereof. The mold speckle converter integrated on the semiconductor laser can be realized by a common contact photolithography process, which is beneficial to reducing the manufacturing cost of the device.
[0023] Specifically, according to some embodiments of the present invention, a method for manufacturing a semiconductor laser is provided, please refer to figure 1 , 2 And 3, take the InP-based material system as an example, but it is not limited thereto, it can also be other material systems such as silicon-based material systems, etc., the manufacturing method of the semiconductor laser includes the following steps:
[0024] (1) sequent...