32results about How to "Reduce far-field divergence" patented technology

The invention discloses a red light semiconductor area array light source device for laser display. The red light semiconductor area array light source device for laser display comprises a VCSEL area array and a microlens array, wherein the VCSEL area array at least comprises a plurality of VCSEL units which are used for emitting circular laser beams, and the microlens array is formed by a plurality of microlens and used for performing collimation rounding on the laser beams output by the VCSEL area array and outputting the laser beams. The light source device can reduce optical elements in a projection display optical path, shorten the length of a lighting optical path, and improve the optical energy utilization rate. In addition, the VCSEL area array can reduce interference between VCSEL lasers and weaken laser speckles, and therefore projection display quality is improved. According to the red light semiconductor area array light source device, the area array light source packaging technology and VCSEL are adopted, a two-dimensional array is easy to integrate, and the defect that power transmitted by a single tube is poor can be overcome. The VCSEL is available in wafer test, reduces cost greatly and is easy in modularization and packaging.

The invention provides a gallium stibino mid-infrared circular spot output low divergence angle edge photon emission crystal laser. The laser comprises an n type substrate, an n type electrode which is deposited on the reverse side of n type substrate, one-dimensional photonic crystals, a lower waveguide layer, an active layer, an upper waveguide layer, a p type cover layer, a ridge strip waveguide and a p type electrode, wherein the one-dimensional photonic crystals, the lower waveguide layer, the active layer, the upper waveguide layer, the p type cover layer, the ridge strip waveguide and the p type electrode are sequentially deposited on the front side of the n type substrate, and the ridge strip waveguide, the p type cover layer, the upper waveguide layer, the active layer, the lower waveguide layer, and the one-dimensional photonic crystals form a P-N knot. The alternating growth direction of the one-dimensional photonic crystals is perpendicular to the direction of the P-N knot, the direction of the ridge strip waveguide is parallel to the direction of the P-N knot, and the ridge strip waveguide and the one-dimensional photonic crystals form asymmetrical photonic crystal composite waveguides. The one-dimensional photonic crystals are imported to a ridge strip waveguide laser, and the mode perpendicular to the direction of the P-N knot can be regulated and controlled, so that the light field area of a ground mode is increased, and the far field divergence angle of the ground mode in the direction perpendicular to the P-N knot is reduced.

The invention belongs to the technical field of semiconductor laser, and discloses a semiconductor laser spectrum beam combining device and method based on a collimation-deflection element. The devicecomprises a semiconductor laser array (1), and a fast axis collimating mirror (2), a light beam rotating element (3), a collimation-deflection element (4), a diffraction grating (5) and an output coupling mirror (6) which are sequentially arranged along a light path, wherein the collimation-deflection element (4) is used for refracting light beams emitted by different emission units and enablingthe light beams to enter the same area of the diffraction grating (5), and the diffraction grating (5) is used for diffracting a plurality of light beams overlapped in the same area at the same diffraction angle, so that the light beams become the same light beam and are outputted. Thus, by improving the composition of each component in the beam combining device, the arrangement mode and the internal structure of each component and the like, the problems of feedback of light beams emitted by an off-center emission unit, low beam combining efficiency and the like in the traditional semiconductor laser array spectrum beam combining mode can be effectively solved.

The invention discloses a metal antenna structure for improving the slow axis far field of a surface emission semiconductor laser unit. The metal antenna structure comprises a substrate, a grating layer, an electrical isolation layer, double-channel filler, a lower ohmic contact layer and a sub-wavelength metal plasma antenna, wherein the substrate is provided with a double-channel ridge-shaped waveguide structure, and a laser unit active region is arranged inside a ridge-shaped region; the grating layer is arranged on the upper surface of the substrate; the electrical isolation layer is arranged on the upper surface of the grating layer, and an electric injection window is formed by breaking the position, corresponding to the ridge-shaped region, on the upper surface of the grating layer; double channels are filled with the double-channel filler; the lower ohmic contact layer is arranged on the lower surface of the substrate; the sub-wavelength metal plasma antenna is arranged on the upper surface of the electrical isolation layer and the upper surface of the double-channel filler, and an electric injection ohmic contact region and a light output window are formed at the same time in the mode that the position, corresponding to the ridge-shaped region, of the sub-wavelength metal plasma antenna is broken. The metal antenna structure effectively reduces the far field divergence angle in the slow axis direction of the surface emission laser unit, and realizes manufacturing of a small-divergence-angle quasi-circular spot or even circular spot surface emission device.

The invention provides a silicon-based optical antenna and a preparation method. The silicon-based optical antenna comprises an SOI substrate, the SOI substrate at least comprises a substrate siliconlayer, a buried oxidation layer and a top silicon layer, the buried oxidation layer is positioned between the substrate silicon layer and the top silicon layer, the top silicon layer of the SOI substrate is etched to form a row of waveguides arranged horizontally, the spacing of the waveguides is in Gaussian distribution, and each waveguide is engraved with a grating. A waveguide array in the optical antenna is arranged in Gaussian distribution, so that light waves can realize a low far-field divergence angle, a good grating lobe inhibition effect, and high horizontal and vertical radar scanning resolution when passing a 2D diffraction grating.

The invention provides a photonic crystal vertical-cavity surface-emitting laser, and the laser comprises an oxidation limiting layer; a P-type DBR reflecting layer grown on the oxidation limiting layer, wherein the P-type DBR reflecting layer is etched with a light-emitting region and multiple layers of aperture gradient photonic crystal air hole structures which are periodically arranged along the radial direction of the light-emitting region; the multi-layer aperture gradient photonic crystal air hole structure is a two-dimensional photonic crystal air hole structure with a central point defect. According to the photonic crystal vertical cavity surface emitting laser, high-power single-mode lasing can be achieved, gradient distribution of refractive indexes is introduced in the radial direction of a light emitting area, the far-field divergence angle can be further reduced, and the light beam quality is improved.

Disclosed is a semiconductor laser device with high-power and high-beam-quality lasers. An outer resonant cavity is constructed in the outer portion of a semiconductor booster element, and a collimation optical element, a spectral dispersion element and a coupling output mirror are sequentially arranged in the outer resonant cavity. The semiconductor booster element comprises a plurality of active gain areas which are linearly arranged in parallel, a coating with the high reflectivity on the laser wavelength is plated on one side of each active gain area, a coating with the high transmittance on the laser wavelength is plated on the other side of each active gain area, the collimation optical element is arranged behind the side, plated with high-transmittance coatings, of the semiconductor booster element, and the direction of a central optical axis coincides with the direction of the central optical axis of emitted light beams of the semiconductor optical booster element. The spectral dispersion element is placed behind the collimation optical element with a certain angle, and the coupling output mirror is arranged behind the spectral dispersion element in the beam propagation direction. According to the laser device, the mode of laser shock is improved, and the output power of the laser device is effectively improved on the premise of not affecting the laser beam quality.

The invention discloses a semiconductor laser and a manufacturing method thereof. The semiconductor laser integrates a first waveguide layer and a second waveguide layer of a passive area in a resonant cavity in a butt joint growth mode, and when current is injected into an active area to generate optical gain to achieve lasing for output, the current can pass through a double-layer waveguide of the passive area; when the light field is coupled to the lower waveguide to reach an output end face, the size of the light spot in the vertical direction is effectively increased, the near-field lightspot is expanded, and the far-field divergence angle is reduced, so that the light beam output quality is improved, the light beam adjustment is facilitated, the optical fiber coupling efficiency isimproved, and the packaging coupling cost is reduced. And meanwhile, when the light field is transmitted from the double-layer waveguide of the passive area to single-layer waveguide of the active area, the loss is increased compared with that of a single-layer waveguide, so that the loss of external feedback light is increased, and the anti-reflection capability of the laser is further improved.

The invention discloses a tunable laser and a manufacturing method thereof. The tunable laser comprises a gain region and a distributed Bragg reflection region which are positioned on the same substrate, are equal in height and are attached to each other, wherein the gain region and the distributed Bragg reflection region are respectively of a double-ridge waveguide structure, and each of the gainregion and the distributed Bragg reflection region comprises a lower ridge waveguide and an upper ridge waveguide; the lower ridge waveguide of the gain region and the lower ridge waveguide of the distributed Bragg reflection region respectively and sequentially comprise a light spot amplification layer, a spacing layer and an active layer from bottom to top; the upper ridge waveguide of the gainregion and the upper ridge waveguide of the distributed Bragg reflection region respectively comprise a cladding layer and a cover layer from bottom to top; the upper ridge waveguide of the gain region is a wedge-shaped waveguide; and the upper ridge waveguide of the distributed Bragg reflection region is a side wall grating waveguide. According to the tunable laser, the light spot size of the end face of the laser can be amplified while the wavelength tuning function is achieved, and the coupling efficiency of the laser and the optical fiber is improved.

The invention discloses a semiconductor laser integrated with a slow optical waveguide on a chip. The semiconductor laser mainly solves the problem of far-field divergence of outgoing beams of an existing semiconductor laser. The laser comprises a laser active region (1), a substrate (2), a steering structure (3) and a slow optical waveguide structure (4), the laser active region (1) is located onone side of the substrate (2) in the epitaxial layer direction, and the steering structure (3) is located on the other side of the substrate (2) in the epitaxial layer direction and used for changingthe propagation direction of laser beams vertically emitted by the laser active region; and the slow optical waveguide structure (4) is positioned on one side of the substrate (2) along the ridge width direction and is used for realizing emission of a coherent light beam array and reducing a far-field divergence angle of a light beam. According to the semiconductor laser, the far-field divergenceangle of the semiconductor laser can be greatly reduced, so that the system integration level of the semiconductor light source is improved, and the semiconductor laser can be used for laser infraredinterference, on-chip optical interconnection and space optical communication.

The invention provides a high-power quasi-continuous semiconductor laser chip. A P-type limiting layer of the high-power quasi-continuous semiconductor laser chip is in a step shape, wherein the stepupper layer is limited to the middle region of the step foundation; a P type contact layer is limited to the surface of the step upper layer; an insulating layer correspondingly forms a bending shapeon the surface of a device, and sequentially covers 1) a region, not covered with a metal electrode, of the surface of the P type contact layer; 2) the side surface of the P type contact layer and theside surface o the stage upper layer; and 3) the surface of the step foundation. The high-power quasi-continuous semiconductor laser chip is simple in structure, and capable of effectively lowering the threshold current and the far-field divergence angle of the device, improving the performance of the device, and ensuring that the reliability is not affected, so that the chip meets the occasionswith higher requirements.