The invention relates to a novel polarized uncooled infrared focal plane detector, comprising a semiconductor base, a metal reflection layer, an insulating medium layer, a support layer, a protective layer, a metal electrode layer, and a heat-sensitive layer, wherein the protective layer includes a first protective layer. layer and a second protective layer, the second protective layer is arranged on the thermosensitive layer, the second protective layer is provided with a polarization structure, and the polarization structure includes a grating support layer and is arranged on the grating support layer The metal grating structure adopts the inverted micro-bridge. There is no supporting pier under the micro-bridge, so the structure is not easy to deform; it adopts a three-layer micro-bridge structure, the first layer is an infrared radiation absorption structure, the second layer is a thermal insulation micro-bridge structure, and the third The three layers are polarized structures, which can effectively improve the filling factor of pixels and improve the absorption efficiency of incident infrared radiation; it also relates to a preparation method of a novel polarized uncooled infrared focal plane detector. The two sacrificial layers can be continuously etched, and the wafer surface Very flat.