Ytterbium ion doped ABGS crystal and self-frequency-doubling ultrashort pulse laser
An ultra-short pulse, ytterbium ion technology, used in lasers, phonon exciters, laser parts and other directions, can solve the problem of no breakthrough in self-frequency doubling crystals, and achieve high light damage resistance threshold, good optical quality, optical The effect of fewer components
Active Publication Date: 2020-08-18
SHANDONG UNIV
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Problems solved by technology
[0008] At present, no ideal crystal material that can satisfy the above conditions at the same time has been found in the prior art. Due to the limitation of crystal materials, self-frequency doubling crystals have not made breakthroughs in the field of all-solid-state pulsed lasers in the visible band.
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Embodiment 1
[0048] Self-frequency doubling laser crystal, the self-frequency doubling laser crystal is ytterbium ion doped Ca 3 NbGa 3 Si 2 o 14 Crystal, referred to as Yb: CNGS, the doping concentration of ytterbium ions is 0.1 at.%.
Embodiment 2
[0050] Self-frequency doubling laser crystal, the self-frequency doubling laser crystal is ytterbium ion doped Ca 3 NbGa 3 Si 2 o 14 The crystal, referred to as Yb:CNGS, has a ytterbium ion doping concentration of 50.0 at.%.
Embodiment 3
[0052] Self-frequency doubling laser crystal, the self-frequency doubling laser crystal is ytterbium ion doped Ca 3 NbGa 3 Si 2 o 14 The crystal, referred to as Yb:CNGS, has a doping concentration of ytterbium ions of 5 at.%.
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Abstract
The invention relates to an ytterbium ion doped ABGS crystal and a self-frequency-doubling ultrashort pulse laser. The laser comprises a semiconductor laser pumping source, a focusing system, a firstresonant cavity mirror M1, a self-frequency-doubling laser crystal, a second resonant cavity mirror M2, a GTI mirror, a third resonant cavity mirror M3, a fourth resonant cavity mirror M4 and a saturable absorber, which are arranged along a light path; the self-frequency-doubling laser crystal is an ytterbium ion doped A3BGa3Si2O14 crystal, wherein A is Ca or Sr, and B is Nb or Ta. The crystal haslaser emission and nonlinear optical effects at the same time, and ultrashort pulse self-frequency-doubling green light output is realized by using a self-frequency-doubling crystal through a mode locking technology. The cost is low; one self-frequency-doubling laser crystal is used for replacing a laser crystal and a nonlinear crystal, so that the production cost is greatly reduced, and meanwhile, the machining and assembling links are simplified; and the production efficiency is improved.
Description
technical field [0001] The invention relates to a passive mode-locked self-frequency doubling ultrashort pulse laser, especially based on ytterbium ion doping A 3 B Ga 3 Si 2 o 14 A self-frequency doubling laser of (A=Ca, Sr; B=Nb, Ta) crystal belongs to the field of laser technology, and relates to laser and nonlinear crystal devices. Background technique [0002] Visible band (380nm-760nm) pulsed laser, especially ultrashort pulse laser (picosecond, femtosecond level) is an important technical means to study ultrafast phenomena in the objective world, and is widely used in micro-nano processing, optical detection, military defense and other fields. For example, for unknown personnel entering military restricted areas during wartime, the use of green (~532nm) pulsed lasers can temporarily blind the intruders and stop their actions. The pulsed laser light source of this wavelength can achieve effective but harmless area defense. At present, the more common way to obtain...
Claims
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IPC IPC(8): H01S3/109H01S3/16
CPCH01S3/1095H01S3/1618H01S3/1655
Inventor 张栩朝郭世义王正平许心光
Owner SHANDONG UNIV



