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Garnet type current sensing device and manufacturing method of garnet module

A sensing device, garnet technology, applied in the direction of measuring device, voltage/current isolation, measuring current/voltage, etc., can solve problems affecting the measurement accuracy and stability of the system, complex process, high energy consumption, etc., to achieve convenience and safety Simple monitoring and system design, less optical components

Inactive Publication Date: 2013-07-10
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, no corresponding measures are taken to fix the magnetization direction of the magneto-optical material in this scheme, and the resulting drift of the polarization state will affect the measurement accuracy and stability of the entire system
The Chinese patent with the patent application number 200910056802.3 adopts the magneto-optical recording method and obtains the permanent magnetic domain by optical etching method, but the process is complicated, the energy consumption is high, the productivity is low, and the practicability is not strong

Method used

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  • Garnet type current sensing device and manufacturing method of garnet module
  • Garnet type current sensing device and manufacturing method of garnet module

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Experimental program
Comparison scheme
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Embodiment 1

[0041] figure 1 It is a structural schematic diagram of the garnet-type current sensing device of the present invention.

[0042] like figure 1 As shown, the garnet-type current sensing device consists of a light source 1, an input polarization-maintaining fiber 2, an input fiber collimator 3, a polarizer 4, a garnet module 5, a polarizer 6, an output fiber collimator 7, an output The components such as the polarization maintaining optical fiber 8 and the detector 9 are connected in sequence to achieve a high degree of integration.

[0043] Wherein, the light source 1 is a point light source for providing a beam of natural light.

[0044] The input polarization maintaining fiber 2 is connected to the light source 1 and the input fiber collimator 3 to ensure that the polarization direction of natural light does not change when it is transmitted in the input polarization maintaining fiber 2 .

[0045] The input fiber collimator 3 is used to transform the natural light into in...

Embodiment 2

[0076] In the second embodiment, the garnet-type current sensing device can also adopt the following structure: the light source 1 can also be a surface light source. The polarizer 4 can also be a Glan polarizing prism. The buffer layer 503 is made of Ta, Ag, and Al, and has a thickness of 10 μm. The bias film layer 502 is made of neodymium iron boron (NdFeB) and samarium cobalt (SmCo) with a thickness of 7 μm. The protective layer 501 is entirely made of SiN and SiO2, and has a thickness of 80 nm. The analyzer 6 can also be a Glan polarizing prism.

[0077] In the preparation method of the garnet module 5, the thin film growth system may also be a magnetron sputtering apparatus. Other structures of the second embodiment are the same as those of the first embodiment.

Embodiment 3

[0079] In the third embodiment, the garnet-type current sensing device may also adopt the following structure: the polarizer 4 is a Glan polarizing prism. The buffer layer 503 can also be made of TAg and Al, and has a thickness of 8 μm. The bias film layer 502 is entirely made of aluminum nickel cobalt (AlNiCo) and has a thickness of 20 μm. The protective layer 501 is made of SiN, SiO2 and Ta, and has a thickness of 100 nm. The analyzer 6 can also be a Glan polarizing prism. Other structures of the third embodiment are the same as those of the first embodiment.

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Abstract

The invention discloses a garnet type current sensor and a manufacturing method of a garnet module. The sensor is formed by a light source, an input polarization maintaining optical fiber, an input optical collimator, a polarizer, the garnet module, an analyzer, an output optical collimator, an output polarization maintaining optical fiber and a detector in a connected mode. The garnet module is a core part of the sensor, and a bias film layer capable of solidifying an initial magnetization direction of a garnet material is coated on the garnet module. The garnet type current sensor uses the detector to directly detect changes of a Faraday rotation angle of incident light caused by current changes, and current parameters can be indirectly obtained. Garnet which is provided with high Verdet constant, high transmittance, low temperature coefficient and good mechanical and physical optic performance serves as a core sensing element, and the bias film layer is coated on the garnet to correct system light paths, so that sensitivity of the garnet type current sensor is substantially improved, and system errors are reduced.

Description

technical field [0001] The invention relates to a garnet type current sensing device and a preparation method of a garnet module. Background technique [0002] Garnet type current sensor is based on Faraday's magneto-optical effect and indirectly measures the current. [0003] Compared with traditional electromagnetic current sensors, garnet-type current sensors have more obvious advantages. [0004] First of all, from a structural point of view, the garnet-type current sensor does not contain iron cores, AC coils and other structures, so that the high and low voltages are completely separated during measurement, the insulation performance is good, and there is no risk of open circuit at the output end. Eliminate magnetic saturation, hysteresis and other phenomena existing in traditional electromagnetic current transformers. [0005] Secondly, from the material point of view, the garnet-type current sensor adopts the structure of all-optical devices, which is small in size...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/00G01R15/24G01R3/00
Inventor 雷文锋焦新兵马跃马立新阮长江张俊杰
Owner UNIV OF SHANGHAI FOR SCI & TECH
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