Structure and manufacturing method of third-order distributed feedback terahertz quantum cascade laser

A quantum cascade, terahertz technology, applied in lasers, phonon exciters, laser components, etc., can solve the problems of large far-field divergence angle, phase mismatch, far-field spot difference, etc., to overcome the far-field divergence The effect of large angle and large coupling power

Active Publication Date: 2019-05-10
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a third-order distributed feedback terahertz quantum cascade laser structure and its manufacturing method, which are used to solve the problem of the third-order distributed feedback terahertz quantum cascade laser in the prior art. There is a phase mismatch in the laser, which leads to a large far-field divergence angle and poor far-field spot

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  • Structure and manufacturing method of third-order distributed feedback terahertz quantum cascade laser
  • Structure and manufacturing method of third-order distributed feedback terahertz quantum cascade laser
  • Structure and manufacturing method of third-order distributed feedback terahertz quantum cascade laser

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Embodiment 1

[0051] In order to solve the phase mismatch problem of the third-order distributed feedback terahertz quantum cascade laser, the present invention proposes a manufacturing scheme of a terahertz quantum cascade laser with high output power and small far-field divergence angle by changing the structure of the waveguide. see Figure 1a and Figure 1b , which are respectively shown as a cross-sectional schematic diagram and a three-dimensional schematic diagram of the third-order distributed feedback terahertz quantum cascade laser structure of the present invention, including a substrate 1, a ridge waveguide region formed on the substrate 1, and a ridge waveguide region formed on the ridge waveguide region The third-order grating structure in 7; where:

[0052] The ridge waveguide region sequentially includes a lower electrode 2, an interlayer region and an upper electrode 6 from bottom to top;

[0053] The interlayer region sequentially includes a lower contact layer 3, an acti...

Embodiment 2

[0070] The present invention also provides a method for manufacturing a third-order distributed feedback terahertz quantum cascade laser structure, including the following steps:

[0071] Step S1 is first performed: a substrate is provided, and an etch barrier layer, an upper contact layer, an active region, a lower contact layer, and a first bonding metal layer are sequentially formed on the substrate from bottom to top.

[0072] As an example, the step S1 includes:

[0073] S1-1: Using a semi-insulating GaAs wafer as a substrate, grow about 400 nm thick Al on the substrate by molecular beam epitaxy (MBE) 0.5 Ga 0.5 As etch stop layer;

[0074] S1-2: MBE grows a heavily doped n-type GaAs upper contact layer with a thickness of about 400 nanometers on the etching barrier layer, and its function is to make the metal and GaAs form a non-alloy ohmic contact;

[0075] S1-3: MBE growing an AlGaAs / GaAs alternating multilayer periodic structure active region on the contact layer, ...

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Abstract

The invention provides a third-order distributed feedback terahertz quantum cascade laser structure and a making method thereof. The structure comprises a substrate, a ridge waveguide region and a third-order grating structure. The ridge waveguide region comprises a lower electrode, a sandwich region and an upper electrode in order from the bottom up. The sandwich region comprises a lower contact layer, an active region and an upper contact layer from the bottom up. The third-order grating structure comprises a plurality of parallel slits which are arranged in a periodic manner and pass through the upper electrode and the sandwich region in the vertical direction. The longitudinal duty ratio of the third-order grating structure is in the range from 8% to 15%. Terahertz wave is generated in the active region, is emitted from the slits by the mode selection effect of the third-order grating structure and is coupled in the space to the longitudinal ends of the ridge waveguide region. In the invention, the third-order grating is introduced in a waveguide structure of the terahertz quantum cascade laser and a relatively small far-field divergence angle is obtained by adjusting different grating duty ratios, thereby overcoming the problem that the third-order grating has a relatively big far-field divergence angle due to phase mismatch.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, and relates to a third-order distributed feedback terahertz quantum cascade laser structure and a manufacturing method thereof. Background technique [0002] Terahertz (THz) quantum cascade laser (Quantum Cascade Laser, QCL) covers the frequency range of 1-10THz, has the advantages of small size, light weight, and easy integration, and is a very important radiation source in the field of THz applications. In order to cater for applications in the fields of communication, imaging, and spectrum analysis, it is necessary to optimize the design of THz QCL in terms of waveguide structure, so that THz QCL has the performance of single-mode output, low far-field divergence angle, and high output power. [0003] At present, there are mainly two waveguide structures, semi-insulating surface plasmon waveguide structure and double-sided metal waveguide structure. Compared with the semi-insulat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/34H01S5/343
CPCH01S5/3402H01S5/34333
Inventor 黎华朱永浩曹俊诚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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