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Single-mode tunable terahertz quantum cascade laser device structure and manufacturing method

A quantum cascade and device structure technology, which is applied to laser parts, optical waveguide semiconductor structures, lasers, etc., can solve the problems of large divergence angle of far-field beams, small wavelength tunable range, and reduced beam quality. Effects of device cost, reduction of far-field divergence angle, and improvement of beam quality

Active Publication Date: 2015-07-08
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a device structure and manufacturing method of a single-mode tunable terahertz quantum cascade laser, which is used to solve the problems existing in the terahertz quantum cascade laser in the prior art. The process is difficult, the production cost is high, the wavelength tunable range is small, and the divergence angle of the far-field beam is large, which reduces the problem of beam quality

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  • Single-mode tunable terahertz quantum cascade laser device structure and manufacturing method

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Embodiment 1

[0054] see Figure 1 to Figure 2 , the present invention provides a device structure of a single-mode tunable terahertz quantum cascade laser, the device structure of the single-mode tunable terahertz quantum cascade laser at least includes: a semi-insulating GaAs substrate 6, a GaAs buffer layer 5, The first contact layer 4, the active region 3, the second contact layer 2, the first metal layer 1 and the second metal layer 7;

[0055] The semi-insulating GaAs substrate 6, the GaAs buffer layer 5, the first contact layer 4, the active region 3, the second contact layer 2 and the first metal layer 1 are stacked sequentially from bottom to top, the active region 3, the first The second contact layer 2 and the first metal layer 1 form a ridge structure 8 on the first contact layer 4; the side surface 81 of the ridge structure 8 is inclined relative to the end surface 82;

[0056] The ridge structure 8 is divided into a first sub-ridge structure 83 and a second sub-ridge structur...

Embodiment 2

[0072] This embodiment also provides a method for manufacturing a device structure of a single-mode tunable terahertz quantum cascade laser, such as Figure 4 As shown, the manufacturing method of the device structure of the single-mode tunable terahertz quantum cascade laser comprises the following steps:

[0073] Step 1: growing a buffer layer, an n-type heavily doped first contact layer, an active region, and an n-type heavily doped second contact layer on a semi-insulating GaAs substrate;

[0074] Step 2: The first photolithography and etching form a striped ridge structure, the side of the striped ridge structure is inclined relative to the end face; the angle of inclination is less than 30°;

[0075] Step 3: second photolithography and etching, forming a first electrode window on the surface of the striped ridge structure, the first electrode window is divided into two parts along the length direction by a gap structure; The first electrode metal is sputtered in the ele...

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Abstract

The invention provides a single-mode tunable terahertz quantum cascade laser device structure and a manufacturing method. The single-mode tunable terahertz quantum cascade laser device structure at least comprises a semi-insulating GaAs substrate, a GaAs buffer layer, a first contact layer, an active area, a second contact layer, a first metal layer and a second metal layer. The active layer, the second contact layer and the first metal layer form a ridge structure on the first contact layer. The side face of the ridge structure is inclined relative to the end face. The ridge structure is cut into a first sub-ridge structure and a second sub-ridge structure through an interstitial structure in the length direction. By the adoption of the oblique waveguide structure, the transverse mode selection capacity can be improved; on the premise that device single transverse mode output is ensured, the device width is larger, the outgoing beam far-field divergence angle is decreased, the refractive index is changed by injecting current of different magnitudes into two waveguides of a coupled cavity structure THz QCL, the Vernier effect is utilized for achieving the tunable wavelength, and the wavelength tunable range of the single-mode tunable terahertz quantum cascade laser device structure is larger than that of an existing device structure changing the refractive index only through current injection.

Description

technical field [0001] The invention belongs to the technical field of laser semiconductors, and relates to a terahertz quantum cascade laser, in particular to a device structure and a manufacturing method of a single-mode tunable terahertz quantum cascade laser. Background technique [0002] Terahertz (hereinafter referred to as THz, 1THz=1012Hz) band refers to the frequency in the electromagnetic spectrum from 100GHz to 10THz, the corresponding wavelength is from 3 mm to 30 microns, and the electromagnetic spectrum region between millimeter wave and infrared light. The THz radiation source is a key device for the application of THz technology. Among many THz radiation generation methods, THz quantum cascade laser (hereinafter referred to as THz QCL) is one of the main structures used for THz radiation sources due to its advantages of high energy conversion efficiency, small size, portability and easy integration. Among them, systems such as terahertz spectroscopy, communi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/343H01S5/22
Inventor 姚辰曹俊诚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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