Tunable laser and manufacturing method thereof
A technology for tuning lasers and light spots, which is applied to lasers, laser components, semiconductor lasers, etc., can solve the problems of inability to change the shape of the mode field, increase the cost of packaging, and mismatch the mode field, so as to reduce the power density and increase the output power , reducing the effect of overlap
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Embodiment 1
[0071] The invention provides a method for manufacturing a tunable laser, such as figure 1 shown, including the following steps:
[0072] Step 1: epitaxially grow n-type InP buffer layer 2 (500nm thick), spot enlargement layer 3, and InP spacer layer 4 ( 1.5-2.5μm thick), InGaAlAs active layer 5 (including InAlAs upper and lower confinement layers and InGaAlAs quantum well layers, 200nm-300nm thick) and InP sacrificial layer 6 (300nm thick), such as figure 2 ;
[0073] Wherein, the spot enlargement layer 3 is a far-field reduction layer formed of an InGaAsP layer with a thickness of 40-60 nm;
[0074] Step 2: Use ion implantation equipment to implant P ions into the InP sacrificial layer 6 in the DBR region and the phase region to introduce a large number of point defects, and rapid thermal annealing to move the point defects to the InGaAlAs active layer 5 to promote the quantum of the InGaAlAs active layer 5 The interdiffusion of elements in the well and the quantum barri...
Embodiment 2
[0083] The preparation method of this embodiment 2 is the same as that of embodiment 1, the difference is that the light spot amplification layer 3 of this embodiment 2 is a diluted waveguide layer, and a 60nm-thick InGaAsP layer and a 300nm-thick InP layer are alternately grown for 3 to 5 cycles form.
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