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a semiconductor laser

A technology of lasers and semiconductors, applied in semiconductor lasers, structural details of semiconductor lasers, lasers, etc., can solve problems such as poor far-field quality, unsatisfactory small divergence angles, etc., achieve small far-field divergence angles, and reduce catastrophic optical damage risk, easy-to-manufacture effect

Active Publication Date: 2020-11-24
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Aiming at the defects of the prior art, the purpose of the present invention is to solve the existing problems such as larger threshold current, longer device length, secondary epitaxial growth and docking, poor Far-field quality and less than ideal small divergence angle and other issues

Method used

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  • a semiconductor laser
  • a semiconductor laser
  • a semiconductor laser

Examples

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Effect test

Embodiment 1

[0051] Embodiment 1, based on the first semiconductor laser with a small divergence angle of the present invention.

[0052] The operating wavelength of the semiconductor laser in this example is 1310nm, and its three-dimensional structure is shown in the attached figure 1 , from the substrate layer to the top cladding layer are: substrate layer 1, buffer layer 2, lower waveguide core layer 3, lower spacer layer 4, lower barrier layer 5, lower confinement layer 6, active layer 7, upper confinement layer 8. The upper barrier layer 9, the upper spacer layer 10, the corrosion stop layer 11, the upper cladding layer 12, the sub-covering layer 13, and the top covering layer 14. The material, doping type and thickness of each layer are shown in Table 1:

[0053] Table 1 Embodiment 1 Material used for each layer, doping type and thickness table

[0054]

[0055] Wherein, the upper cladding layer 12, the sub-cladding layer 13, and the top cladding layer 14 form the ridge of the de...

Embodiment 2

[0058] Embodiment 2, the second semiconductor laser with a small divergence angle based on the present invention.

[0059] The operating wavelength of the semiconductor laser in this example is also 1310nm, and its three-dimensional structure diagram is shown in the attached figure 1 , from the substrate layer to the top cladding layer are: substrate layer 1, buffer layer 2, lower waveguide core layer 3, lower spacer layer 4, lower barrier layer 5, lower confinement layer 6, active layer 7, upper confinement layer 8. The upper barrier layer 9, the upper spacer layer 10, the corrosion stop layer 11, the upper cladding layer 12, the sub-covering layer 13, and the top covering layer 14. The material, doping type and thickness of each layer are shown in Table 2:

[0060] Table 2 Embodiment 2 Materials used for each layer, doping type and thickness table

[0061] Dielectric layer Material doping type Thickness (nm) Remark Substrate 1 InP N type --- ...

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Abstract

The invention discloses a semiconductor laser. The semiconductor laser comprises a lower-part flat plate waveguide and an upper-part ridge waveguide along a growth direction of an epitaxial layer anda ridge width unchanged region at a back side and a ride width narrowing region at a front side along an optical transmission direction, at the ridge width unchanged region, the ridge width of the upper-part ridge waveguide is maintained unchanged, at the ride width narrowing region, the ridge width of the upper-part ridge waveguide is gradually narrowed, the ridge width of a wide ridge end of theride width narrowing region is equal to the ridge width of the ridge width unchanged region, the ridge width of the ridge end of the ride width narrowing region is smaller than the ridge width of thewide ridge end, a narrow ride end is an optical output end, at the ridge width narrowing region, the equivalent refractive index of the upper-part ridge waveguide is gradually reduced with the ridgewidth gradually narrowed until the narrow ridge end approaches the equivalent refractive index of the lower-part flat plate waveguide, the longitudinal size and the transverse size of a base mode of the narrow ridge both are increased, so that the longitudinal scattering angle and the transverse scattering angle of output light both are reduced. The scattering angle of the output light of the semiconductor laser provided by the invention is smaller than the scattering angle of a conventional ridge waveguide-structure semiconductor laser.

Description

technical field [0001] The present invention relates to the technical field of semiconductor lasers, and more specifically, to a semiconductor laser. Background technique [0002] In the coming Internet of Everything era, the demand for communication between people and people, people and things, and things and things has increased dramatically, making optical communication systems play an increasingly important role in the modern information society. All kinds of life, services and industrial applications derived from developed communication infrastructure are related to the advancement of science and technology, the improvement of national strength and the more convenient life of people. The key basic components in the optical communication system, such as transmitters and receivers, their reliability and high-quality performance determine whether the optical communication system can operate stably, orderly, and with low energy consumption for a long time. [0003] In the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/02H01S5/022H01S5/026H01S5/028H01S5/10H01S5/22H01S5/30H01S5/343B82Y20/00
Inventor 李洵兰明文
Owner HUAZHONG UNIV OF SCI & TECH
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