Multi-layer tunnel cascaded semiconductor laser

Abstract

The invention discloses a multi-overlaid layer tunnel cascaded semiconductor laser, which belongs to the field of semiconductor lasers. The multi-overlaid layer tunnel cascaded semiconductor laser comprises 2-4 single-layer laser units which are connected vertically, wherein two adjacent single-layer laser units are connected with each other by growing a tunnel junction unit layer with a special structure according to a semiconductor crystal growing rule; and a tunnel joint unit comprises a highly-doped PN junction and a super lattice layer which grows on the upper side or / and lower side of the PN junction regularly. The tunnel cascaded semiconductor laser is formed by a special tunnel junction with a super lattice, so that the output light power of the semiconductor laser is greatly increased, and the inner resistance and pressure drop at the tunnel junction in the semiconductor laser are lowered by using an optimized tunnel junction; an expansion waveguide is added into the semiconductor laser, so that a far-field divergence angle of light output is greatly reduced; and the multi-overlaid layer tunnel cascaded semiconductor laser has good economic benefit, and contributes to miniaturized application of a high-power semiconductor laser.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, in particular to a multi-layer tunnel cascaded semiconductor laser. Background technique [0002] Due to the advantages of small size, light weight, high efficiency and long life, high-power semiconductor lasers have been widely used in laser processing (drilling, cutting, welding, surface processing, material modification, etc.), laser medical treatment (diagnosis, treatment, Surgery, cosmetology, etc.), laser display and scientific research and other fields. [0003] In order to achieve low current and high power operation, the chip must be connected in series. The series connection of semiconductor chips is much more complicated than the parallel connection, which is not conducive to integration. The traditional method is to achieve series connection through physical stacking, sintering and series connection of multiple semiconductor lasers by stacking discrete chips, and then connecting ...

AI Technical Summary

Problems solved by technology

In the past, tunnel junctions worked hard to increase the doping concentration. Although the resistance can be reduced, the diffusion of electrons and holes will absorb light, reducing the light extraction efficiency and power.

In addition, the previous tunnel cascade lasers have problems such as optical field overlap, high resistance and voltage of the tunnel junction, and large divergence angle.

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