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High voltage isolation structure and method

A high-voltage, electrical isolation technology, applied in the direction of structural fixed capacitor combinations, circuits, capacitors, etc., can solve the problem of occupying the area of ​​​​microelectronic devices

Pending Publication Date: 2020-06-16
TEXAS INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, oversized capacitors or other high voltage components take up too much microelectronics real estate

Method used

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  • High voltage isolation structure and method
  • High voltage isolation structure and method
  • High voltage isolation structure and method

Examples

Experimental program
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Embodiment Construction

[0013] In the drawings, like reference numbers refer to like elements throughout, and the various features are not necessarily drawn to scale.

[0014] figure 1 A microelectronic device 100 including a high voltage component 101 is shown. In one example, the high voltage component 101 is a vertical high voltage capacitor formed in an integrated circuit (IC) device along with one or more additional components. In some examples, capacitor 101 is a separate component or part of a hybrid circuit. figure 1 The device 100 is formed on a semiconductor substrate 102, such as a silicon wafer, a silicon-on-insulator (SOI) substrate, or other semiconductor structures. One or more isolation structures 103 are formed on selected portions of the upper surface of the substrate 102 . In some examples, the isolation structure 103 may be a shallow trench isolation (STI) feature or a field oxide (FOX) structure. In one example, high voltage capacitor 101 is formed in a multilayer metallizati...

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PUM

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Abstract

Described examples include a microelectronic device (100) with a high voltage capacitor (101) that includes a high voltage node (130), a low voltage node (111), a first dielectric (104) disposed between the low voltage node (111) and the high voltage node (130), a first conductive plate (120) disposed between the first dielectric (104) and the high voltage node (130), and a second dielectric (123)disposed between the first conductive plate (120) and the high voltage node (130).

Description

Background technique [0001] The voltage rating of a high voltage blocking capacitor is limited by the high electric field that occurs at the bottom edge of the metal forming the high voltage capacitor metal. To prevent dielectric breakdown, high voltage capacitors may be oversized relative to the requirements for a given operating voltage level. However, oversized capacitors or other high voltage components take up too much microelectronic device area. Contents of the invention [0002] Described examples provide a microelectronic device having a high voltage component comprising: a high voltage node; a low voltage node; a first dielectric disposed between the high voltage node and the low voltage node; a first conductive plate , between the first dielectric and the high voltage node; and a second dielectric disposed between the first conductive plate and the high voltage node. [0003] Another example described provides a capacitor comprising: a conductive first capacitor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/94H10N97/00
CPCH01L24/05H01L24/48H01L2224/04042H01L2224/05567H01L2224/05624H01L2224/48463H01L28/60H01L23/5223H01G4/33H01G4/30H01G4/012H01G4/40H01L2924/00014H01L23/53257H01G4/08H01L29/0649H01L21/283H01L21/02164H01L21/762H01L23/528H01L23/5226H01L23/60H01L27/0629H01L24/45H01L21/768
Inventor 托马斯·戴尔·博尼菲尔德卡纳安·桑达拉潘迪安
Owner TEXAS INSTR INC