A low-temperature co-fired dielectric material with adjustable dielectric constant series and its preparation method
A dielectric material, low-temperature co-firing technology, applied in inorganic insulators, ceramics, etc., can solve the problems of deviation of glass powder composition, sample performance is not as good as expected, unsuitable for glass, etc.
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Embodiment 1
[0026] An embodiment of the preparation method of the low-temperature co-fired dielectric material described in the present invention, the preparation method of the low-temperature co-fired dielectric material described in this embodiment includes the following steps:
[0027] Dissolve 9.3mL of tetraethyl orthosilicate in a mixed solution of alcohol (100mL) and deionized water (9.3mL); in order to promote hydrolysis, add nitric acid to adjust the pH of the solution to about 1 and stir; after the solution is clarified, add 0.07 g NaNO 3 , 0.24gKNO 3 , 0.28g Ca(NO 3 ) 2 4H 2 O and 0.92g HBO 3 solution, stirred vigorously and heated at 75°C, then added ammonia water to adjust the pH to about 7 to form a gel, dried the obtained gel and calcined at 700°C for 2 hours to obtain a silicon-based amorphous phase filler; finally weighed 49.81% ZrO 2 (particle size 5 μm) and 50.19% silicon-based amorphous phase filler were ball-milled for 18 hours, dried and pressed into sheets at 7 ...
Embodiment 2
[0030] An embodiment of the preparation method of the low-temperature co-fired dielectric material described in the present invention, the preparation method of the low-temperature co-fired dielectric material described in this embodiment includes the following steps:
[0031] Dissolve 9.3mL of tetraethyl orthosilicate in a mixed solution of alcohol (93mL) and deionized water (9.3mL); in order to promote hydrolysis, add nitric acid to adjust the pH of the solution to about 1 and stir. After the solution is clarified, add 0.07 g NaNO 3 , 0.24g KNO 3 , 0.28g Ca(NO 3 ) 2 4H 2 O and 0.92g HBO 3 solution, stirred vigorously and heated at 80°C; then added ammonia water to adjust the pH to about 7 to form a gel, dried the obtained gel and calcined at 700°C for 2 hours to obtain a silicon-based amorphous filler; finally weighed 55% ZrO 2 (particle size of 5 μm) and 45% silicon-based amorphous phase filler were ball-milled for 15 hours. After drying, it was dry-pressed at 7 MPa a...
Embodiment 3
[0034] An embodiment of the preparation method of the low-temperature co-fired dielectric material described in the present invention, the preparation method of the low-temperature co-fired dielectric material described in this embodiment includes the following steps:
[0035] Dissolve 9.3mL of tetraethyl orthosilicate in a mixed solution of alcohol (100mL) and deionized water (9.3mL); in order to promote hydrolysis, add nitric acid to adjust the pH of the solution to about 1 and stir; after the solution is clarified, add 0.07 g NaNO 3 , 0.24gKNO 3 , 0.28g Ca(NO 3 ) 2 4H 2 O and 0.92g HBO 3 solution, stirred vigorously and heated at 60°C; then added ammonia water to adjust the pH to about 7 to form a gel, and the resulting gel was dried and calcined at 700°C for 2 hours to obtain a silicon-based amorphous phase filler; finally weighed 60% ZrO 2 (particle size of 5 μm) and 40% silicon-based amorphous phase filler were ball-milled for 16 hours, dried and pressed into sheets...
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