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Metal interconnection layer with adjustable dielectric constants and manufacture method of metal interconnection layer

A technology of metal interconnection layer and dielectric constant, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of dielectric constant of dielectric layer, reduce adjustment, etc., achieve low cost, increase device speed, and simple method easy effect

Active Publication Date: 2013-02-20
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned problems in the prior art, the technical problem to be solved by the present invention is the difficulty that the dielectric constant of the existing dielectric layer film is fixed to reduce and adjust the dielectric constant of the dielectric layer

Method used

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  • Metal interconnection layer with adjustable dielectric constants and manufacture method of metal interconnection layer
  • Metal interconnection layer with adjustable dielectric constants and manufacture method of metal interconnection layer
  • Metal interconnection layer with adjustable dielectric constants and manufacture method of metal interconnection layer

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Embodiment Construction

[0033] The present invention will be explained in detail below in conjunction with the accompanying drawings.

[0034] The metal interconnection layer of the embodiment of the present invention and its fabrication method include:

[0035] Such as figure 1 As shown in , step 1 includes sequentially depositing a barrier layer 3, a dielectric layer 2, and a cover layer 1; the barrier layer 3 is preferably a SiCN layer; the dielectric layer 2 is preferably selected from orthoethyl silicate (TEOS) film, fluorosilicate glass (FSG ) film, SiCOH or low dielectric constant film; Covering layer 1 is preferably silicon dioxide layer, silicon oxynitride layer;

[0036] Such as figure 2 As shown in , the groove 4 is formed by photolithography and etching;

[0037] Such as image 3 As shown in , the metal wire layer 6 is formed by electroplating and grinding, preferably a copper wire layer, and preferably a metal diffusion barrier layer 5 is also provided on the periphery of the metal ...

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Abstract

The invention provides a metal interconnection layer with adjustable dielectric constants. The metal interconnection layer comprises a barrier layer, a dielectric layer, metal wire layers and a metal diffusion barrier layer which are sequentially deposited, the metal wire layers are arranged in the dielectric layer, a closed gap is arranged at the position in the dielectric layer, and the position in the dielectric layer is located between the metal wire layers. The metal interconnection layer is simple in structure and low in cost, and a method is simple and convenient to implement; and by means of the metal interconnection layer, metal interlayer dielectric layer thin films with the low and adjustable dielectric constants can be obtained on the condition that dielectric layer thin films are fixed, device speeds are improved, and requirements of different products are met.

Description

technical field [0001] The invention relates to a copper interconnection layer of damascene technology and a manufacturing method thereof, in particular to a metal interconnection layer with adjustable dielectric constant and a manufacturing method thereof. Background technique [0002] With the continuous shrinking of the device size, the device delay caused by metal interconnection is becoming more and more an obstacle to increase the device speed, and a very effective method to reduce the delay of metal interconnection is to use a dielectric film with a lower dielectric constant. [0003] The Damascus copper interconnection technology commonly used in the industry forms a barrier layer, a dielectric layer, a copper wire layer and a barrier layer in the dielectric layer through sequential deposition, photolithography, etching, copper electroplating, and copper grinding. The dielectric constant of the medium is completely determined by the dielectric constant of the thin fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L23/528H01L21/768
Inventor 曾林华任昱吕煜坤张旭昇
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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