Dielectric constant series adjustable low-temperature co-fired dielectric material and preparation method thereof

A dielectric material and low-temperature co-firing technology, applied in ceramics, inorganic insulators, etc., can solve problems such as deviation of glass powder components, sample performance not as good as expected, unsuitable glass, etc.

Active Publication Date: 2020-06-19
GUANGDONG FENGHUA ADVANCED TECH HLDG
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has two main disadvantages: one is that some volatile components in the glass, such as B 2 o 3 and Bi 2 o 3 , so that the obtained glass powder deviates from the originally designed composition, which leads to the performance of the final sample not as expected; the other is that this method is not suitable for the preparation of all glasses, such as CaO-SiO 2 glass etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dielectric constant series adjustable low-temperature co-fired dielectric material and preparation method thereof
  • Dielectric constant series adjustable low-temperature co-fired dielectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] An embodiment of the preparation method of the low-temperature co-fired dielectric material described in the present invention, the preparation method of the low-temperature co-fired dielectric material described in this embodiment includes the following steps:

[0027] Dissolve 9.3mL of tetraethyl orthosilicate in a mixed solution of alcohol (100mL) and deionized water (9.3mL); to promote hydrolysis, add nitric acid to adjust the pH of the solution to about 1 and stir; after the solution is clarified, add 0.07 g NaNO 3 , 0.24gKNO 3 , 0.28g Ca(NO 3 ) 2 4H 2 O and 0.92g HBO 3 solution, stirred vigorously and heated at 75°C, and then added ammonia water to adjust the pH to about 7 to form a gel. The resulting gel was dried and calcined at 700°C for 2 hours to obtain a silicon-based amorphous phase filler; finally weighed 49.81% ZrO 2 (particle size of 5 μm) and 50.19% silicon-based amorphous phase filler were ball-milled for 18 hours, dried and pressed into sheets at...

Embodiment 2

[0030] An embodiment of the preparation method of the low-temperature co-fired dielectric material described in the present invention, the preparation method of the low-temperature co-fired dielectric material described in this embodiment includes the following steps:

[0031] Dissolve 9.3mL of tetraethyl orthosilicate in a mixed solution of alcohol (93mL) and deionized water (9.3mL); in order to promote hydrolysis, add nitric acid to adjust the pH of the solution to about 1 and stir. After the solution is clarified, add 0.07 g NaNO 3 , 0.24g KNO 3 , 0.28g Ca(NO 3 ) 2 4H 2 O and 0.92g HBO 3 solution, stirred vigorously and heated at 80°C; then added ammonia water to adjust the pH to about 7 to form a gel, and the resulting gel was dried and calcined at 700°C for 2 hours to obtain a silicon-based amorphous filler; finally weighed 55% ZrO 2 (particle size of 5 μm) and 45% silicon-based amorphous phase filler were ball-milled for 15 hours. After drying, it was dry-pressed a...

Embodiment 3

[0034] An embodiment of the preparation method of the low-temperature co-fired dielectric material described in the present invention, the preparation method of the low-temperature co-fired dielectric material described in this embodiment includes the following steps:

[0035] Dissolve 9.3mL of tetraethyl orthosilicate in a mixed solution of alcohol (100mL) and deionized water (9.3mL); to promote hydrolysis, add nitric acid to adjust the pH of the solution to about 1 and stir; after the solution is clarified, add 0.07 g NaNO 3 , 0.24gKNO 3 , 0.28g Ca(NO 3 ) 2 4H 2 O and 0.92g HBO 3 solution, stirred vigorously and heated at 60°C; then added ammonia water to adjust the pH to about 7 to form a gel, and the resulting gel was dried and calcined at 700°C for 2 hours to obtain a silicon-based amorphous phase filler; finally weighed 60% ZrO 2 (particle size of 5 μm) and 40% silicon-based amorphous phase filler were ball-milled for 16 hours, dried and pressed into sheets at 7 MPa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
dielectric lossaaaaaaaaaa
Login to view more

Abstract

The invention discloses a dielectric constant series adjustable low-temperature co-fired dielectric material. The low-temperature co-fired dielectric material comprises a zirconia main phase and a silicon-based amorphous phase filler, wherein a weight ratio of the zirconia main phase to the silicon-based amorphous phase filler is (40-65): (35-60), and the weight percentage of SiO2 in the silicon-based amorphous phase filler is greater than or equal to 50%. By controlling the ratio of the zirconium oxide main phase to the silicon-based amorphous phase filler, the dielectric constant of the obtained material is continuously adjustable within a relatively wide range of 7-12, and dielectric loss can be as low as 0.1%@1 MHz. A material system obtained in the invention can be sintered at 800-900DEG C, can be compatibly co-sintered with a silver electrode, and can be used as a low-temperature co-sintered dielectric material. The invention also discloses a preparation method of the dielectricconstant series adjustable low-temperature co-fired dielectric material.

Description

technical field [0001] The invention belongs to the technical field of ceramic materials, and in particular relates to a low-temperature co-fired dielectric material with adjustable dielectric constant series and a preparation method thereof. Background technique [0002] With the development of semiconductor technology, the packaging of active components has been developed rapidly. However, in actual device applications, the number of passive components (capacitors, inductors, etc.) is usually more than ten times that of active components. Such a large number of passive components restricts the development of miniaturization of devices. Low temperature co-fired ceramic technology has become the most promising passive component packaging technology due to its unique three-dimensional structure. Commonly used low-temperature co-fired ceramic materials are mainly based on glass-ceramic systems and glass / ceramic composite systems. At present, the research on zirconia in low-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/48C04B35/624
CPCC04B35/481C04B35/624C04B2235/3201C04B2235/3208C04B2235/3409C04B2235/6567C04B35/488C04B35/6261C04B2235/3244C04B2235/3418C04B2235/5436C04B2235/441C04B2235/3454C04B35/16C04B35/22C04B2235/72C03C1/006C04B35/622H01B3/12C04B35/14C04B35/64C04B2235/5445C04B2235/656
Inventor 沓世我王小舟陈涛刘芸特里·詹姆士·弗朗科姆付振晓曹秀华胡春元
Owner GUANGDONG FENGHUA ADVANCED TECH HLDG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap