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95results about How to "Adjustable dielectric constant" patented technology

Composite wave absorbing material and preparation method thereof

The invention relates to the field of wave absorbing materials, in particular to a composite wave absorbing material and a preparation method thereof. The composite wave absorbing material is characterized in that the surface of each of MXene layers is coated with a ferrite, and the different MXene layers and the ferrites on the surfaces of all the layers jointly form a sandwich structure. The composite wave absorbing material and the preparation method thereof provided by the invention have the benefits that MXene is prepared by adopting a chemical etching process, the ferrites prepared by adopting a hydrothermal preparation process are compounded with the MXene so as to grow in situ on the surface of MXene powder, the degree of integration between the ferrites and the MXene powder is high, and the coating is uniform and compact; the prepared MXene/ferrite composite wave absorbing material with the sandwich structure is light in density, high in strength, adjustable in dielectric constant and excellent in wave absorbing performance. In addition, the preparation method is simple, used equipment is simple, the process is stable, the production efficiency is high, the cost is reduced, the compactness and the uniformity of the material are good.
Owner:MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS

Cordierite-based microcrystalline glass material and preparation method thereof

Belonging to the field of electronic ceramic materials, the invention provides a cordierite-based microcrystalline glass material and a preparation method thereof, and overcomes the problem of poor matching with silicon chips caused by large thermal expansion coefficient, low flexural strength, high dielectric constant, high dielectric loss and the like of existing ceramic materials. The cordierite-based microcrystalline glass material provided by the invention belongs to a magnesium-aluminum-silicon system, the principal crystalline phase is cordierite, the density is high, the flexural strength is up to 230MPa, the Young's modulus is 80-100GPa high, the thermal stability is good, the thermal expansion coefficient is 1.5-2.5*10<-6> / DEG C (20-600DEG C) low, and the cordierite-based microcrystalline glass material can form good match with silicon chips. At the same time, the dielectric constant can be adjusted to 4.5-5.0, the dielectric loss is tan Delta is less than 0.6*10<-3>, the signal transmission speed is greatly improved, and the power consumption is greatly reduced. In addition, in the preparation process, the temperature is lowered from the 1100DEG C or above in the traditional sintering process to 900DEG C or below, under the premise of improving the performance, the sintering temperature is further reduced and the production cost is saved. Moreover, the whole preparation technology has the characteristics of simple process, abundant raw material sources and energy consumption reduction, thus being of important significance for industrial production.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Preparation method of silicon carbide/carbon hollow porous microsphere wave-absorbing material

The invention relates to the technical field of wave-absorbing materials, in particular to a preparation method of a silicon carbide / carbon hollow porous microsphere wave-absorbing material. The invention aims to solve the technical problems of large particle size and easy agglomeration of silicon carbide particles in the silicon carbide / carbon composite material prepared by the existing method. The method includes: mixing deionized water, anhydrous ethanol and ammonia water, adding a surfactant, resorcinol, a silicon source and a formaldehyde solution, stirring the substances uniformly at room temperature, then adding melamine, performing stirring, transferring the mixture into a high-temperature and high-pressure reactor for reaction, and conducting high temperature calcination; and thenperforming mixing with magnesium powder, conducting high temperature calcination in a nitrogen atmosphere, washing off redundant magnesium powder with hydrochloric acid, and carrying out washing anddrying. The silicon carbide / carbon hollow porous microsphere obtained by the method has good chemical homogeneity and large specific surface area, and can effectively avoid agglomeration and sinteringof silicon carbide particles. The material prepared by the method provided by the invention is used for making light and efficient wave-absorbing coatings.
Owner:HARBIN INST OF TECH

Low-temperature co-fired ceramic material emitting white light and preparation method thereof

The invention provides a low-temperature co-fired ceramic material emitting white light and a preparation method thereof. The ceramic material comprises the following components in percentage by mol: 10 to 20 percent of CaO, 20 to 30 percent of B2O3, 50 to 60 percent of SiO2, and 1 to 9 percent of optical activating agent ions. The invention also relates to the preparation method of the material, namely, a sol-gel method for preparing the low-temperature co-fired ceramic material emitting white light. The invention has the advantages that: 1, the preparation process is simple and advanced, the sintering temperature is low by adopting the Sol-gel method and is between 800 DEG C and 900 DEG C, the sintering shrink rate at the temperature is controllable between 13 percent and 17 percent, and a glass ceramic material has a flat and smooth surface, as well as higher strength; 2, the dielectric constant is adjustable between 4(1MHz) and 6 (1MHz), and the coefficient of dielectric loss is lower than 0.002; 3, the light emission intensity is high, the material can emit yellow and blue light under activation of ultraviolet light with the wavelength of between 320nm and 410nm, the white light obtained by mixing the blue light and the yellow light can be used for illuminating and displaying; and 4, based on the advantages, the low-temperature co-fired ceramic material can be applied to the fields of white light LED (Light Emitting Diode) lamps, integrated ceramic substrates and other electronic devices and semiconductors, as well as microelectronic packaging materials.
Owner:UNIV OF SCI & TECH BEIJING

Low-temperature-sintered temperature-stable composite microwave dielectric ceramic and preparation method thereof

The invention relates to a low-temperature-sintered temperature-stable composite microwave dielectric ceramic and a preparation method thereof. The composite microwave dielectric ceramic comprises the following components: a low-temperature-sintered microwave dielectric ceramic material with a negative resonant frequency temperature coefficient and a low-temperature-sintered microwave dielectric ceramic material with a positive resonant frequency temperature coefficient. According to the invention, the low-temperature-sintered microwave dielectric ceramic material with a negative resonant frequency temperature coefficient or the low-temperature-sintered microwave dielectric ceramic material with the positive resonant frequency temperature coefficient is used as a main material, a low-temperature-sintered microwave dielectric ceramic material with the same structure and an opposite resonant frequency temperature coefficient is added as an adjusting material through a two-phase compounding method, and compounding is conducted to form a multiphase ceramic material or a solid solution so as to obtain a low-temperature-sintered microwave dielectric ceramic material having a nearly-zero resonance frequency temperature coefficient. The problems that existing microwave dielectric ceramic is high in sintering temperature, and the temperature coefficient of resonance frequency changes greatly along with temperature are solved. The microwave dielectric ceramic material has a wide application scope in the LTCC low-temperature-sintered microwave dielectric ceramic materials.
Owner:CHINA ZHENHUA GRP YUNKE ELECTRONICS

Flexible dielectric film and organic field effect transistor prepared thereby

The invention provides a dielectric material, a dielectric film, a flexible organic field effect transistor (OFET) prepared by the dielectric film, a preparation method of the flexible organic field effect transistor (OFET), and the application thereof in the field of electronic equipment. The dielectric material and the dielectric film contain polymethyl methacrylate and polyacrylic acid. The thickness of the dielectric film is 1-2 microns. According to the preparation method of the flexible OFET, the dielectric film is processed on a substrate covered with a grid electrode. After that, the spin-coated treatment of an organic semiconductor layer is conducted with a solution. Finally, a source electrode and a drain electrode are evaporated. The dielectric film disclosed by the invention issmall in electricity leakage, adjustable in dielectric constant, controllable in thickness, and high in strength/flexibility. The dielectric film and the flexible OFET are good in electrical performance, and excellent in application prospect in the aspect of low-energy-consumption flexible electronic equipment. The preparation method of the dielectric film and the flexible OFET is low in cost andsimple and convenient in process.
Owner:FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI

Low-temperature-sintered composite microwave dielectric ceramic material and preparation method thereof

The invention belongs to the field of electronic ceramics and manufacturing thereof, and particularly relates to a low-temperature-sintered composite microwave dielectric ceramic material and a preparation method thereof. The low-temperature-sintered composite microwave dielectric ceramic material uses BaTi5O11-nCuO-xM as a base material, wherein according to a weight ratio, n is greater than or equal to 0.005 and is smaller than or equal to 0.020, M is a sintering improver, and x is greater than or equal to 0.010 and is smaller than or equal to 0.075; M specifically comprises the following components in percent by weight: greater than or equal to 27.25% and smaller than or equal to 46.74% of Ba2CO3, greater than or equal to 4.25% and smaller than or equal to 7.47% of Li2CO3, greater than or equal to 8.65% and smaller than or equal to 9.19% of SiO2, greater than or equal to 25.59% and smaller than or equal to 38.29% of B2O3, greater than or equal to 20.88% and smaller than or equal to 32.95% of ZnO, greater than or equal to 1.58% and smaller than or equal to 9.83% of Al2O3, and greater than or equal to 0.29% and smaller than or equal to 0.95% of MnCO3. The low-temperature-sintered composite microwave dielectric ceramic material provided by the invention has the sintering temperature of 875-920 DEG C, has a dense system, has the dielectric constant of 30-40, the loss greater than or equal to 10-4 and the Qxf (GHz) of 20000-30000, can be co-fired with silver well in an LTCC (low temperature co-fired ceramics) process, and can be easily produced industrially; the low-temperature-sintered composite microwave dielectric ceramic material can be widely applied to low-temperature high-dielectric constant microwave dielectric core materials in dielectric resonators, filters, oscillators and other microwave devices in satellite communication, and has an important industrial application value.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
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