Compound microwave dielectric ceramic material and preparation method thereof

Abstract

The invention belongs to field of electronic ceramic and manufacturing thereof and in particular relates to a compound microwave dielectric ceramic material and a preparation method thereof. A chemical formula of the material is Zn0.15+0.35xTi0.55-0.05xNb0.3+0.7xO2+2x (x is equal to 0.2 to 0.8mol); the material is prepared from raw materials including ZnO, TiO2 and Nb2O5 and is prepared through asolid-phase method; the material has a medium dielectric constant (40 to 84) and low loss (1.10*10<-4> to 3.02*10<-4>), and the frequency-temperature coefficient is nearly zero. The content of two phases is adjusted through adjusting an x numerical value, low sintering temperature is ensured and the effect of improving the microwave dielectric performance is realized. The compound microwave dielectric ceramic material is applicable to manufacturing of multilayered dielectric resonators, microwave antennas, microwave capacitors, filters and the like.

Description

technical field [0001] The invention belongs to the field of electronic ceramics and its manufacture, and in particular relates to a composite microwave dielectric ceramic material and a preparation method thereof. Background technique [0002] Microwave dielectric ceramics refer to ceramic materials used in microwave (300MHz to 300GHz) frequency band circuits as dielectric materials and to achieve one or more functions, and are the basis of modern communication technology. Microwave dielectric ceramics have been widely used in microwave components such as dielectric resonators, filters, dielectric substrates, dielectric waveguide circuits, microwave capacitors, duplexers, and antennas. [0003] The practical application of microwave dielectric ceramics should meet the following requirements: (1) moderate dielectric constant to facilitate the miniaturization of devices; (2) high quality factor Q×f value and low loss (where Q ~ 1 / tanδ, f is Resonant frequency); (3) Near-zero...

AI Technical Summary

Problems solved by technology

[0006] to Zn 0.5 Ti 0.5 NbO 4 Combining can greatly improve the dielectric constant, quality factor and temperature stability coefficient of resonance frequency of the system, but the sintering temperature required for sintering and compacting the system is too high

Such as using TiO 2 For compounding, TiO 2 The sintering temperature is 1400°C, which consumes a lot of energy and requires high equipment

Images