A dynamic rds(on) parameter testing machine for gallium nitride devices

A parametric testing, gallium nitride technology, applied in the testing field, can solve the problem that the testing machine cannot meet the requirements, and achieve the effects of accurate differential voltage difference, high system reliability, and overall simple structure

Active Publication Date: 2020-08-21
佛山市联动科技股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Existing test machines are often not up to the mark

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  • A dynamic rds(on) parameter testing machine for gallium nitride devices

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Embodiment Construction

[0025] The idea, specific structure and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments and accompanying drawings, so as to fully understand the purpose, features and effects of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, other embodiments obtained by those skilled in the art without creative efforts belong to The protection scope of the present invention. In addition, all the connection / connection relationships mentioned in this article do not refer to the direct connection of components, but mean that a better connection structure can be formed by adding or reducing connection accessories according to specific implementation conditions. The various technical features in the invention can be combined interactively on the premise of not conflicting wi...

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Abstract

The invention discloses a dynamic Rds(on) parameter testing machine for gallium nitride devices, comprising: a switch driver, an energy storage inductance, a load resistor, a discharge diode, a voltage source, a first constant current source, and a second constant current source , a first diode, a second diode, a first current limiting resistor, a second current limiting resistor, a first input node, a second input node, a differential amplifier and a signal output node. Utilizing the characteristic that the current of the energy storage inductor cannot be mutated, the current flowing through the GaN device remains in the initial state at the moment when the GaN device is turned on, and at the same time, the bleeder diode is used to ensure that the energy is stored when the GaN device is turned off. The induced current of the inductor is discharged. The circuits connected to the first differential input terminal and the second differential input terminal of the differential amplifier are arranged in a symmetrical form, which eliminates noise interference and improves the accuracy of the entire testing machine. This testing machine is mainly used for testing the dynamic Rds(on) parameters of GaN devices.

Description

technical field [0001] The invention relates to the technical field of testing, in particular to a dynamic Rds(on) parameter testing machine for gallium nitride devices. Background technique [0002] Gallium nitride (GaN) devices have the advantages of higher efficiency, higher frequency, and smaller volume than traditional silicon-based semiconductor devices. Existing gallium nitride devices need to test the dynamic Rds(on) parameters of gallium nitride devices. The resistance between D and S when on is also called the dynamic Rds(on) parameter because the resistance will change dynamically when the FET is made of gallium nitride (GaN) material. The existing practice is to use the dynamic Rds(on) parameter of the gallium nitride device of the testing machine for testing silicon-based semiconductor devices for testing. Since the dynamic Rds(on) parameter of the gallium nitride device will drop rapidly when it is turned on, if it is necessary to accurately test its dynamic ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26G01R27/02
CPCG01R27/02G01R31/2601G01R31/2637
Inventor 陈希辰
Owner 佛山市联动科技股份有限公司
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