Unlock instant, AI-driven research and patent intelligence for your innovation.

reaction chamber

A reaction chamber and cavity technology, applied in the field of reaction chambers, can solve problems such as accidental ignition, and achieve the effect of ensuring uniformity and stability and preventing ignition phenomenon.

Active Publication Date: 2021-10-15
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention discloses a reaction chamber to solve the problem that accidental ignition easily occurs inside the existing reaction chamber

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • reaction chamber
  • reaction chamber
  • reaction chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0028] The technical solutions disclosed by various embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0029] Such as Figure 1 to Figure 7 As shown, the embodiment of the present invention discloses a reaction chamber. The disclosed reaction chamber may be a MOCVD (Metal-organic Chemical Vapor ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a reaction chamber, comprising: a cavity body, the cavity body and the upper cover are connected through an insulating part, and the cavity body and the upper cover form an inner cavity, and the upper cover is provided with a through hole communicating with the inner cavity; the air intake mechanism includes The first insulating block, the second insulating block, the intake pipe and the flange, one end of the intake pipe is connected to the flange, at least part of the first insulating block is in the through hole, and the side of the first insulating block facing away from the inner cavity is opened There is an accommodation space, the second insulating block is arranged in the accommodation space, the flange is arranged in the opening of the accommodation space, the second insulating block is provided with a second air inlet, the air inlet pipe communicates with the second air inlet, and the first insulating block is opened There is a first air intake hole, one end of the first air intake hole communicates with the second air intake hole, and the other end of the first air intake hole communicates with the inner cavity. On the axial direction of the through hole, the projection of the first air intake hole Outside the projection of the second air intake. This solution solves the problem that accidental ignition easily occurs inside the existing reaction chamber.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment, in particular to a reaction chamber. Background technique [0002] In the technical field of semiconductor equipment, MOVCD (Metal-organic Chemical Vapor Deposition, metal-organic compound chemical vapor deposition) is a new type of vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy growth. It uses organic compounds of Group III and II elements and hydrides of Group V and VI elements as crystal growth source materials, and performs vapor phase epitaxy on the substrate in a thermal decomposition reaction mode to grow various III-V, II- Thin-layer single-crystal materials of group VI compound semiconductors and their multi-component solid solutions. [0003] Usually, there are two flat-plate electrodes that are separated by a certain distance and parallel to each other in the chamber, one of which is connected to radio frequency, and the other is gr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/08C30B25/14C30B29/40C30B29/48
CPCC30B25/08C30B25/14C30B29/40C30B29/48Y02E60/50C30B30/02C23C16/5096C23C16/45565C23C16/45561H01J37/3244H01J37/32577H01J37/32449C23C16/507
Inventor 徐刚
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD