Gate driver integrated circuit and method of forming the same
An integrated circuit and gate drive technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of inability to reduce size, high manufacturing cost, large chip size, etc., and achieve the effect of guaranteeing performance and improving stability
Active Publication Date: 2022-08-02
NINGBO SEMICON INT CORP
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Problems solved by technology
[0005] The purpose of the present invention is to provide a gate drive integrated circuit to solve the problem that the size of the existing gate drive integrated circuit cannot be reduced, resulting in a larger corresponding chip size and higher manufacturing costs
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Embodiment Construction
[0042] As described in the background art, in the existing gate driver integrated circuit, the field plate structure provided is a multi-level field plate structure, which not only has a high height, but also causes a relatively high gap between the top surface of the field plate structure and the substrate surface. A large step height difference is required, and the multi-level field plate structure usually needs to have a large width dimension, so that the corresponding chip size cannot be reduced, and the production cost of the product is high.
[0043] E.g, figure 1 is a schematic structural diagram of an existing gate driver integrated circuit, such as figure 1 As shown, the gate driver integrated circuit includes:
[0044] A substrate 100, in which a drift region 110N of a first doping type is formed, and the drift region 110N extends from the top surface of the substrate to the interior of the substrate;
[0045] a field effect transistor, the field effect transistor ...
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Abstract
The present invention provides a gate driving integrated circuit and a method for forming the same. The field plate structure in the gate driving integrated circuit has a continuous extending first conductive layer, the first conductive layer spirally surrounds the drain region with the drain region as the spiral center, so that the field plate structure forms a single-layer field plate structure. The continuously extending first conductive layer in the single-layer field plate structure can form a voltage divider resistor to realize voltage division in the direction from the drain region to the source region, thereby improving the voltage withstand performance of the device; and the single-layer field plate structure has a better preparation process. For simplicity, the step height difference between the field plate structure and the substrate can also be greatly reduced, thereby facilitating the reduction of device size.
Description
technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a gate driver integrated circuit and a method for forming the same. Background technique [0002] The high-voltage gate driver integrated circuit is the product of the combination of power electronic device technology and microelectronics technology, and is a key component of mechatronics. High-voltage gate driver ICs are widely used, such as electronic ballasts, motor drives, dimming, and various power modules. [0003] The high-voltage gate driver integrated circuit generally includes a high-side drive control module, a low-side drive control module and a level shift module. Among them, the low-voltage side drive control module works under the conventional voltage as the control signal part; the high-voltage side drive control module mainly includes the high-voltage control signal part; and the level shift module is used to realize the transmission of the l...
Claims
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IPC IPC(8): H01L29/78H01L29/40H01L21/336
CPCH01L29/7816H01L29/402H01L29/66681
Inventor 袁媛罗海龙李伟
Owner NINGBO SEMICON INT CORP