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Method for embedding radio frequency chip into silicon cavity

A radio frequency chip and cavity technology, which is applied in the field of embedding radio frequency chips in silicon cavities, can solve the problems of uneven bottom, difference, unfavorable chip grounding interconnection, etc., and achieves increased height and flatness, efficient contact, etching, etc. The effect of process optimization

Pending Publication Date: 2020-06-26
浙江集迈科微电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the structure where the RF chip is to be embedded in the silicon cavity, if the TSV is made first, the cavity needs to be made on the back of the adapter board, the bottom of the TSV is the bottom of the cavity, and then the interconnection is made. The depth of the TSV will vary. Do this The bottom that comes out will be uneven, which is not conducive to the ground interconnection of the chip

Method used

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  • Method for embedding radio frequency chip into silicon cavity
  • Method for embedding radio frequency chip into silicon cavity
  • Method for embedding radio frequency chip into silicon cavity

Examples

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Embodiment 2

[0040] like Figure 9 to Figure 14 As shown, the difference between embodiment 2 and embodiment 1 is that the TSV hole 103 in step 101) is first etched to stay in the SOI layer 102, and then the etching is continued with ventilation so that the bottom of the TSV passes through the SOI layer 102. Other processes are the same. details as follows:

[0041] A method for embedding a radio frequency chip in a silicon cavity, specifically comprising the steps of:

[0042]101) Metal pillar forming step: making TSV holes 103 on the lower surface of the carrier plate 101 with the SOI layer 102 through photolithography and etching processes. The diameter range of the TSV holes 103 is between 1um and 1000um, and the depth is between 10um and 1000um . Wherein, the TSV hole 103 is firstly etched to stay in the SOI layer 102 , and then continues to etch through ventilation so that the bottom of the TSV passes through the SOI layer 102 .

[0043] Deposit silicon oxide or silicon nitride o...

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Abstract

The invention discloses a method for embedding a radio frequency chip into a silicon cavity. The method specifically comprises the following steps: 101) a metal column forming step; 102) a cavity manufacturing step; 103) a chip embedding step. The invention provides the method for embedding the radio frequency chip in the silicon cavity, which is convenient to manufacture and simplified in process, and can realize heat dissipation and grounding interconnection at the bottom of the radio frequency chip.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for embedding a radio frequency chip in a silicon cavity. Background technique [0002] Millimeter wave radio frequency technology is developing rapidly in the semiconductor industry. It is widely used in high-speed data communication, automotive radar, airborne missile tracking system, and space spectrum detection and imaging. It is expected that the market will reach 1.1 billion US dollars in 2018 and become an emerging industry. New applications put forward new requirements for the electrical performance, compact structure and system reliability of the product. For the wireless transmitting and receiving system, it cannot be integrated into the same chip (SOC), so it is necessary to integrate different chips including radio frequency units. , filters, power amplifiers, etc. are integrated into an independent system to realize the functions of transmitting and r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50H01L21/56H01L21/768
CPCH01L21/50H01L21/56H01L21/76898H01L21/76879H01L2224/16225H01L2224/73204H01L2224/92125H01L2224/16235H01L2924/15153
Inventor 郁发新冯光建王永河马飞程明芳
Owner 浙江集迈科微电子有限公司
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