Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Built-in self-test circuit and memory

A built-in self-test and circuit technology, applied in the field of memory, can solve the problems of high cost and high cost of memory IP core, achieve the effect of simplifying peripheral equipment, reducing frequency requirements, and shortening test time

Active Publication Date: 2020-06-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF10 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, when testing memory IP cores, external automatic test equipment (ATE) is mainly used to generate test patterns to detect faults in memory IP cores. However, since most memories are high-speed storage, this requires test equipment to be able to The memory provides a higher frequency test clock, and the higher the frequency of the output test clock, the higher the cost of ATE, which leads to the problem of higher cost of memory IP core for high-speed testing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Built-in self-test circuit and memory
  • Built-in self-test circuit and memory
  • Built-in self-test circuit and memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050]In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0051] At present, there are mainly three methods for testing memory IP cores. The first is direct testing. Direct testing refers to a test method for fault checking of memory by generating test patterns from external automatic test equipment (ATE), which can be directly accessed from memory package pins. Because the performance of the memory is mostly high speed, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a built-in self-test circuit and a memory. The built-in self-test circuit comprises: a digital voltage-controlled oscillator used for generating a high-frequency clock signal;a clock signal control module which is used for inputting a high-frequency clock signal into the address input channel, the data input channel, the output channel and tested equipment during high-speed testing; an address input channel which is used for inputting a test address signal into the tested equipment according to the clock signal input by the clock signal control module; a data input channel which is used for inputting a test data signal into tested equipment according to the clock signal input by the clock signal control module; and an output channel which is used for receiving andoutputting an output signal of the tested equipment. A digital voltage-controlled oscillator is integrated in the built-in self-test circuit, a high-frequency clock signal is provided for the test, the frequency requirement of a test clock provided by a test machine is reduced, peripheral equipment is simplified, the test time is shortened, and the test cost is reduced.

Description

technical field [0001] The present application relates to the technical field of memory, in particular to a built-in self-test circuit and memory. Background technique [0002] As the feature size of integrated circuits continues to shrink, the integration and complexity of chips continue to increase, and the number of defects that may exist in memory chips, especially in intellectual property (Intellectual Property, IP) cores of memory, also gradually increases. At the same time, memory is also constantly developing in the direction of high capacity, high speed, low power consumption and high integration. These have greatly increased the difficulty of testing memory IP cores. [0003] At present, when testing memory IP cores, external automatic test equipment (ATE) is mainly used to generate test patterns to detect faults in memory IP cores. However, since most memories are high-speed storage, this requires test equipment to be able to The memory provides a higher-frequen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/12
CPCG11C29/12G11C29/1201G11C29/12015
Inventor 陈巍巍陈岚尤云霞秦毅
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products