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Control method of solid-state modulator

A control method and modulator technology, applied in pulse modulation, electrical components, electronic switches, etc., can solve the problems of complex logic control of power devices, complex manufacturing of pulse transformers, and high cost

Active Publication Date: 2020-06-30
SICHUAN INJET ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has the disadvantages of many pulse unit circuits, complex logic control of power devices, complex manufacturing of pulse transformers, and high cost.

Method used

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  • Control method of solid-state modulator
  • Control method of solid-state modulator
  • Control method of solid-state modulator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Such as Figure 6 As shown, before t4 is the same as the above-mentioned working process, the voltage of the energy storage capacitor C1 is Uc1, and the solid-state switch Q1 applies the gate signal KU1 to generate a pulse current of I1 by adjusting the external parameters of the magnetron (such as the magnetic field strength of the magnetron, Load matching, etc.), in this case, it is better to keep the pulse current flat during the pulse.

[0038] When the pulse current value needs to be changed to I2 (I2<I1), the voltage drop on the energy storage capacitor C1 is Uc2 (Uc2<Uc1), and the external conditions such as magnetron magnetic field strength and load matching are not changed. Before the moment t5, the voltage drop on the energy storage capacitor C1 is Uc2. At the moment t5, the solid-state switch Q1 applies the gate signal KU2 (the amplitude of KU2 can make the solid-state switch Q1 enter the linear region when the pulse current does not reach I2. Work). Accord...

Embodiment 2

[0042] The solid-state modulator with dual-energy pulse output refers to a solid-state modulator that can realize the alternate output of two pulse currents or voltages, so as to realize the alternate output of different pulse intensities of the system. Technical parameters such as falling edge time, flat top decay and pulse time adjustment.

[0043] Such as Figure 7As shown, the solid-state modulator with dual-energy pulse output includes a DC power supply 1 and a DC power supply 2, the energy storage unit includes an energy storage capacitor C1 and an energy storage capacitor C2, and the solid-state switch includes a solid-state switch Q1 and a solid-state switch Q2, so The output terminals of DC power supply 1 and DC power supply 2 are respectively connected in parallel with energy storage capacitor C1 and energy storage capacitor C2. One end of energy storage capacitor C1 is connected to one end of the primary side of the pulse transformer through solid state switch Q1; o...

Embodiment 3

[0048] The above-mentioned control method is used for magnetron loads. The control method for klystrons will be further explained below. At the same time, the realization and application of the conversion time of the solid-state switch from the linear region to the saturation region will be described. Such as Figure 9 As shown, it shows the electrical principle block diagram of the solid-state modulator, which includes DC power supply DY1, energy storage capacitor C1, solid-state switch Q1, and pulse transformer T1; DC power supply DY1 charges and supplements energy for capacitor C1. After the solid-state switch Q1 is turned on, the capacitor The energy is boosted by the solid-state switch Q1 and the pulse transformer T1 and sent to the load klystron. Since the klystron is a nonlinear device, under normal operation, the output current of the klystron has a 3 / 2 power relationship with the voltage at both ends of the klystron, that is, the equivalent impedance of the klystron a...

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Abstract

The invention discloses a control method of a solid-state modulator. The impedance characteristic of a solid-state switch in a linear region is adopted, and the pulse output waveform is adjusted by changing the working point of the solid-state switch in the linear region and / or changing the conversion moment when the solid-state switch is converted from the linear region to a saturation region. Specifically, different gate signals (voltages) are applied to the solid-state switch, the amplitude of the gate signals is adjusted to change the working point and impedance of the solid-state switch in the linear region, the conversion time of the different gate signals is increased or decreased, and adjustment of the solid-state switch from the linear region to a saturation region is achieved. The solid-state modulator disclosed by the invention is simple in circuit, simple to control and good in flat-topped effect of output current, and solves the problem that pulse current waveform is reduced or overshoot or oscillated when the solid-state modulator is provided with a magnetron and a klystron load. The method is suitable for waveform adjustment of single-pulse output or dual-energy pulse output, and can effectively solve the problem that pulse current waveforms cannot be leveled at the same time when dual-energy pulses are alternately output.

Description

technical field [0001] The invention relates to the technical field of solid-state modulators, in particular to a control method for a solid-state modulator. Background technique [0002] A solid-state modulator generally refers to a pulse power supply that directly generates high-voltage pulses through a solid-state switch composed of power semiconductor devices (such as IGBTs and power MOSFETs) that can be turned on and off in series or in parallel. The solid-state modulator requires a very large output pulse power, and the flatness and overshoot protection of the output pulse waveform are one of the important technical indicators of the solid-state modulator, which has an important impact on the subsequent application. As we all know, the pulsed magnetron is a nonlinear device, and its electrical characteristics are similar to that of a diode, that is, there is an obvious threshold voltage Ut. When the anode voltage of the magnetron is less than the threshold voltage Ut, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/567H03K7/00
CPCH03K17/567H03K7/00
Inventor 周英怀杜辉邓长春常双权
Owner SICHUAN INJET ELECTRIC CO LTD