Novel SE Mark point graph structure and preparation method thereof
A new type of dot pattern technology, applied in the field of SEMark dot pattern structure and its preparation, can solve the problems of low production time, high stability, Mark point damage cost, etc., and achieve shortened production time, good stability, and good alignment of points. The effect of topography
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[0049] A kind of novel SE Mark dot graphic structure of the present embodiment, such as figure 1 As shown, including the silicon wafer and four Mark points, the four Mark points are all cross-shaped structures, and the Mark points include two mutually perpendicular straight lines, one of which has a gap, and the gap passes through the other line, and the Mark point is lasered The four corners of the silicon wafer are used for PERC stacked selective emitter technology.
[0050] The present invention also provides a kind of preparation method of novel SE Mark dot pattern structure correspondingly, such as figure 2 As shown, it specifically includes the following steps:
[0051] S1: Pretreating the silicon wafer;
[0052] Wherein, step S1 specifically includes the following steps:
[0053] S11: pre-cleaning the silicon wafer;
[0054] S12: Prepare the textured surface of the silicon wafer.
[0055] S2: preparing a P-N junction;
[0056] Wherein, step S2 specifically includ...
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