Light-emitting backlight source with non-connected same-recess staggered double-sided cathode chamfer single-tip gating structure

A technology of backlight source and cathode, which is applied in the field of light-emitting backlight source with non-coordinated double-sided cathode chamfered single-point gated structure, can solve the problem of occupying carbon nanotube production area, low carbon nanotube cathode electron emission efficiency, waste, etc.

Inactive Publication Date: 2020-07-10
JINLING INST OF TECH
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Second, the electron emission efficiency of the carbon nanotube cathode is relatively low
In the carbon nanotube cathode, only a small number of carbon nanotubes can normally emit electrons, which is not enough to form a

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting backlight source with non-connected same-recess staggered double-sided cathode chamfer single-tip gating structure
  • Light-emitting backlight source with non-connected same-recess staggered double-sided cathode chamfer single-tip gating structure
  • Light-emitting backlight source with non-connected same-recess staggered double-sided cathode chamfer single-tip gating structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but the present invention is not limited to this embodiment.

[0051] The light-emitting backlight of the non-connected depression double-sided cathode chamfering single-point gating structure in this embodiment is as follows: figure 1 , figure 2 and image 3 As shown, it includes a vacuum enclosure and a getter auxiliary element 26 located in the vacuum enclosure. The vacuum enclosure is composed of a front hard transparent glass plate 22, a rear hard transparent glass plate 1 and a glass narrow frame strip 27; The transparent glass plate has anodic etch backing layer 23, anode continuous silver layer 24 and thin luminescent layer 25, and described anode etch cushion layer is connected with anode continuous silver layer, and described thin luminescent layer is made in On the back layer of the anodic etching film; on the rear hard transparent glass pla...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a light-emitting backlight source of a non-joint same-recess staggered double-sided cathode chamfer single-tip gating structure, which comprises a vacuum sealing body and a getter accessory element positioned in the vacuum sealing body, and is characterized in that the vacuum sealing body consists of a front hard transparent glass plate, a rear hard transparent glass plateand a narrow glass frame strip; an anode etching film cushion layer, an anode continuous straight silver layer and a thin light-emitting layer are arranged on the front hard transparent glass plate, the anode etching film cushion layer is connected with the anode continuous straight silver layer, and the thin light-emitting layer is manufactured on the anode etching film cushion layer; and the rear hard transparent glass plate is provided with a non-connected same-recess staggered double-sided cathode chamfer single-tip gating structure. The light-emitting backlight source has the advantages of being good in light-emitting uniformity and high in light-emitting brightness.

Description

technical field [0001] The present invention belongs to the fields of nanometer science and technology, integrated circuit science and technology, semiconductor science and technology, vacuum science and technology, microelectronics science and technology, plane display technology and optoelectronic science and technology. It relates to the production of planar light-emitting backlight, specifically to the production of carbon nanotube cathode light-emitting backlight, especially to a light-emitting backlight with non-union depression, double-sided cathode chamfering and single-point gating structure and its production craft. Background technique [0002] Carbon nanotubes have excellent electron emission characteristics and can be used as an electron source for luminous backlight sources to provide good cathode current for luminous backlight components. The extremely high mechanical strength and good heat resistance of carbon nanotubes can ensure that the carbon nanotubes c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01J17/06H01J17/04H01J17/12H01J17/38H01J17/48H01J9/02H01J9/20
CPCH01J9/02H01J9/025H01J9/20H01J17/04H01J17/066H01J17/12H01J17/38H01J17/48
Inventor 李玉魁
Owner JINLING INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap