Method for preparing optical chiral devices by stacking crystalline nanowire arrays
A technology of nanowire array and silicon nanowire array, which is applied in the field of preparing optical chiral devices by stacking crystalline nanowire arrays, can solve the problems of incomplete research on the mechanism, and achieve good non-toxicity, high transparency, and stable performance. Effect
Active Publication Date: 2021-10-26
NANJING UNIV
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Problems solved by technology
The method of preparing chiral materials based on stacked parallel nanowire arrays is a special way of preparing chiral materials, and the mechanism has not been fully studied. In 2017, Jiawei Lv, Ke Hou, Zhiyong Tang et al. published a paper " Gold Nanowire Chiral Ultrathin Films with Ultrastrong and Broadband Optical Activity" reported a similar stacked nanowire array to achieve the preparation of chiral materials
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[0028] The present invention will be further explained below in conjunction with the accompanying drawings and specific embodiments.
[0029] Such as figure 1 As shown, this embodiment provides a method for preparing optical chiral devices by stacking crystalline nanowire arrays, which specifically includes the following steps:
[0030] 1) Deposit a layer of insulating dielectric layer as a sacrificial layer by PECVD / PVD / CVD on a substrate with a high temperature resistance of 350°C or higher, with a thickness of 600-1μm;
[0031] 2) Define the channel guide pattern of the crystalline nanowire array on the above substrate, and use the inductively coupled plasma (ICP) etching or reactive ion etching (RIE) process to etch the dielectric layer to form the guide of the vertical step side wall The channel, the guide channel generally does not exceed 350nm, and the depth of the guide channel in this embodiment is 150±10nm;
[0032] 3) The guide channel prepared in the above step i...
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Abstract
The invention discloses a method for preparing optical chiral devices by stacking crystalline nanowire arrays. The arrays are cross-stacked by a transfer method to form a multi-layer nanowire array structure with a three-dimensional space structure, and then a chiral device is prepared. In the present invention, the parallel densely arranged long straight nanowire arrays are passed through the transfer method, and each layer is rotated at a certain angle each time, and then the nanowire arrays are stacked in space, so that the effect similar to that of a retarder can be obtained. Combining the birefringence and slow polarizer effects of long straight parallel silicon nanowire arrays, chiral optical devices with high optical activity and high asymmetry factor can be fabricated.
Description
technical field [0001] The invention relates to a method for growing densely arranged long straight crystal nanowire arrays in a large area, more specifically, through steps such as transfer, the silicon nanowire array is rotated at a certain angle and then stacked layer by layer to prepare a silicon nanowire array with high optical properties. Active approach to high-performance chiral devices. Background technique [0002] If an object cannot coincide with its mirror image, we say that the object has chirality, just like our left hand and right hand are mirror images of each other, but they are not strictly coincident. Chiral materials respond differently to left-handed and right-handed circularly polarized light. Taking advantage of this characteristic, chiral materials can be used in 3D display, information storage and processing, biological probes, information encryption, photocatalysis and other fields. Traditional chiral organic molecular materials generally do not ...
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IPC IPC(8): B82B3/00B82Y20/00B82Y40/00
CPCB82B3/0014B82Y20/00B82Y40/00
Inventor 余林蔚董泰阁孙莹王军转
Owner NANJING UNIV