Method for drawing gallium-doped monocrystalline silicon by RCZ method
A technology of monocrystalline silicon and monocrystalline silicon rods, which is applied in the field of gallium-doped monocrystalline silicon drawn by the RCZ method, can solve the problems of long time for silicon liquid temperature stabilization, decrease, poor uniformity of resistivity of gallium-doped monocrystalline silicon, etc., and achieve oxygen The effect of content reduction, reduction of residual material, and reduction of wire interruption rate
Inactive Publication Date: 2020-07-17
包头美科硅能源有限公司 +1
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Problems solved by technology
[0003] The technical problem to be solved by the present invention is that when the size of the furnace body and the single crystal are getting larger and larger, the temperature stabilization time of the silicon liquid is also getting longer and longer. The problem of poor uniformity of single crystal silicon resistivity in the radial direction of the crystal rod, overcomes the shortcomings of the prior art, and provides a method for pulling gallium-doped single crystal silicon by the RCZ method. After the above improvement, the resistance axis and radial uniformity of the obtained silicon single crystal are significantly improved, and the oxygen content is also reduced accordingly.
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Embodiment 1
[0043]A kind of RCZ method draws the method for gallium-doped monocrystalline silicon, comprises the following steps:
[0044] Step 1, dismantle the furnace and clean the furnace;
[0045] Step 2, install the furnace, place the quartz crucible filled with silicon material and gallium metal into the single crystal furnace;
[0046] Step 3, vacuumize and detect leaks in the single crystal furnace;
[0047] Step 4, pressure and melting, set the water flow rate of the water cooling screen to 80slpm; set the quartz crucible speed to 1r / min, the pressure in the furnace to 1500Pa, the flow rate of the inert gas to 80slpm, and the melting power to 150KW to finally obtain liquid silicon , including re-injection, the total weight of silicon liquid in the furnace is 400kg;
[0048] Step 5, temperature stabilization, set the water flow rate of the water cooling screen to 80slpm; set the quartz crucible rotation speed to 12r / min, the crystal rotation speed to 10r / min, the furnace pressur...
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The invention discloses a method for drawing gallium-doped monocrystalline silicon through an RCZ method. The method comprises the following steps of 1, disassembling a furnace and cleaning a hearth,2, carrying out charging, 3, carrying out vacuumizing and leakage detection in a single crystal furnace, 4, carrying out pressure treatment and melting, 5, stabilizing the temperature, 6, carrying outseeding, 7, carrying out shouldering, 8, rotating shoulders, 9, performing equal-diameter growth, 10, carrying out ending and cooling and 11, stopping the furnace, taking out the monocrystalline silicon rod, and carrying out re-feeding or disassembling the furnace. According to the method for drawing the gallium-doped monocrystalline silicon through the RCZ method, after existing equipment and process are improved, the axial and radial resistance uniformity of the drawn gallium-doped monocrystalline silicon rod is obviously improved, the effective drawing length of a crystal rod is increasedto 70-75% from 60-65%, and circulating materials and the remaining material amount in the last furnace are reduced, the oxygen content of the head of the crystal bar is reduced by 1.0 PPM, and the wire breakage rate is reduced by 10%.
Description
technical field [0001] The invention relates to the technical field of silicon single crystal growth, in particular to a method for pulling gallium-doped single crystal silicon by an RCZ method. Background technique [0002] The RCZ method (multiple loading crystal pulling technology) is becoming more and more mature for pulling solar-grade single crystals, and the furnace body is getting bigger and bigger. The size of the single crystals being drawn is also getting bigger and bigger, and the quality requirements are also getting higher and higher. high. When the size of the furnace body and the single crystal is getting larger, it takes longer to stabilize the temperature of the silicon liquid. When producing gallium-doped silicon single crystal, the segregation coefficient of gallium in silicon is only 0.08. This leads to large changes in axial and radial doping of the drawn silicon rods (inhomogeneous resistance distribution) when gallium-doped single crystal silicon is ...
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IPC IPC(8): C30B29/06C30B15/20C30B15/04
CPCC30B15/04C30B15/20C30B29/06
Inventor 马新星王艺澄张志强
Owner 包头美科硅能源有限公司