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Photolithographic mask defect repairing method and photolithographic mask

A technology of photolithography mask and repair method, which is applied in the field of photolithography mask plate and photolithography mask plate defect repair field, and can solve the problems of poor repair effect of photolithography mask plate defects and the like

Pending Publication Date: 2020-07-21
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the repair effect of photolithographic mask defects is poor with the existing technology

Method used

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  • Photolithographic mask defect repairing method and photolithographic mask
  • Photolithographic mask defect repairing method and photolithographic mask
  • Photolithographic mask defect repairing method and photolithographic mask

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] As mentioned in the background art, the effect of repairing the defect of photolithography mask plate by using the existing technology is poor, and it will be described in detail with reference to specific embodiments.

[0034] Figure 1 to Figure 2 It is a schematic cross-sectional structure diagram of an embodiment of a method for repairing defects of a photolithographic mask plate.

[0035] Please refer to figure 1 , providing a substrate 100, the surface of the substrate 100 has a mask 101, the mask 101 includes a first region I and a second region II; a first opening is formed in the first region I of the mask 101 103 , the bottom of the first opening 103 exposes the top surface of the substrate 100 .

[0036] Please refer to figure 2 After the first opening 103 is formed, a second opening 104 is formed in the second region II of the mask 101 , and the second opening 104 is separated from the first opening 103 .

[0037] The mask plate 101 includes a design pa...

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Abstract

The invention discloses a photolithographic mask defect repairing method and a photolithographic mask, and the photolithographic mask defect repairing method comprises the steps: providing a substratewhich comprises a first region and a second region which are separated from each other, and the surface of the substrate is provided with the mask; forming a first opening in the mask plate of the first region, and exposing the top surface of the substrate from the bottom of the first opening; forming a first protective layer on the side wall of the first opening; and after the first protective layer is formed, forming a second opening in the mask of the second region, and exposing the bottom of the second opening out of the top surface of the substrate. The method has a good repairing effecton the defects of the photolithographic mask.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for repairing defects of a photolithographic mask and a photolithographic mask. Background technique [0002] In the field of integrated circuit manufacturing, photolithography technology is used to transfer patterns from photolithographic masks containing circuit design information to wafers (Wafer), where photolithographic masks (Mask), also known as optical A stencil, a mask or a photomask is a flat plate with partial translucency for exposure light, on which there is at least one geometric figure with light-shielding properties for exposure light, and the geometric figure is a design figure, so The above design pattern is used to expose the photoresist on the surface of the wafer to form a corresponding pattern. [0003] During the manufacturing process of the photolithography mask, it is easy to generate additional graphics in the photolithography mask. I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/72
CPCG03F1/72
Inventor 王杰秦学飞薛粉丛林娜
Owner SEMICON MFG INT (SHANGHAI) CORP