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Manufacturing method for high-voltage VDMOS device

A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low impurity activation rate at annealing temperature, high forward voltage drop of device diodes, and large diode loss, etc., to achieve improved Yield rate, reduction of forward voltage drop and on-resistance, effect of reduction of contact resistance

Active Publication Date: 2018-09-18
江苏新顺微电子股份有限公司
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Problems solved by technology

However, such a backside implantation process is performed after the front side process is completed. Since the front side metal has already been formed, the annealing after the backside implantation cannot use a process temperature condition exceeding the alloy temperature. Generally, the backside implantation annealing temperature is between 400°C and 450°C. , such annealing temperature impurity activation rate is very low, and the defects introduced by large-dose back implantation are not fully repaired, resulting in high forward voltage drop of device diode and high diode loss

Method used

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  • Manufacturing method for high-voltage VDMOS device
  • Manufacturing method for high-voltage VDMOS device
  • Manufacturing method for high-voltage VDMOS device

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Embodiment Construction

[0027] The implementation of the aluminum-free CVD Schottky diode chip and its manufacturing process proposed by the present invention will be further described below in conjunction with specific examples. And it should be noted that all the drawings are in a very simplified form and use inaccurate scales, and are only used to facilitate and clearly illustrate the structure and implementation of the present invention.

[0028] see image 3 , the present invention relates to a kind of manufacturing method of high-voltage VDMOS device, mainly carry out back implantation before the front process, carry out doping to the back, and grow LPSiN (SiN 3 N 4 ) to protect the back of the wafer, and then perform the front process of the wafer, thereby increasing the doping concentration on the back, reducing the contact resistance, and obtaining lower device diode forward voltage drop and on-resistance. Specifically, it includes the following steps:

[0029] Such as Figure 4 As shown...

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Abstract

The invention relates to a manufacturing method for a high-voltage VDMOS device, and the method is characterized in that the method comprises the steps: carrying out the back injection before the front technology; carrying out the doping of a back surface, and growing Si3N4 for protecting the back surface of a wafer; carrying out the front technology of the wafer, thereby improving the back dopingconcentration, reducing the contact resistance, and obtaining the lower device diode forwarding voltage and conduction resistance.

Description

technical field [0001] The invention relates to a manufacturing method of a high-voltage VDMOS device. It belongs to the technical field of integrated circuit or discrete device manufacturing. Background technique [0002] In the manufacturing process of high-voltage VDMOS devices using antimony-doped substrates, the back contact resistance has always been an important factor affecting the forward voltage drop and on-resistance of device diodes. Since the doping concentration of the antimony-doped substrate is not high enough, the general substrate resistivity is 0.008-0.02ohm.cm, that is, the doping concentration is 6.33e18 / cm 3 -1.22e18 / cm 3 If the substrate is directly in contact with the back metal, a good ohmic contact cannot be formed. The conventional process is to thin the back surface after the front process is completed, then perform back implantation, anneal, and re-grow the back metal to increase the back surface of the substrate. Concentration, reduce the con...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/265H01L21/02
CPCH01L21/02164H01L21/0217H01L21/26586H01L29/66712
Inventor 赵秋森陈晓伦许柏松徐永斌
Owner 江苏新顺微电子股份有限公司