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Inverted trapezoidal gate MOSFET device structure with inclined side wall field plate

A device structure and inclined sidewall technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as premature breakdown of devices and reduce source-leakage current, so as to improve reliability and expand The effect of depleting the width and the process is simple and reliable

Active Publication Date: 2020-07-28
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The device structure expands the depletion width of the drift region by using an inverted trapezoidal gate structure, an inclined mesa structure with a certain inclined angle, and an inclined field plate structure covering the inclined sidewall, thereby reducing the source-drain current, and effectively solve the problem of premature breakdown of the device due to the strong electric field at the bottom of the gate groove, and finally improve the reverse breakdown voltage of the power MOSFET, making it more suitable for high-voltage operating environments

Method used

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  • Inverted trapezoidal gate MOSFET device structure with inclined side wall field plate
  • Inverted trapezoidal gate MOSFET device structure with inclined side wall field plate
  • Inverted trapezoidal gate MOSFET device structure with inclined side wall field plate

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Embodiment 1

[0075] In this embodiment, the structure of an inverted trapezoidal gate MOSFET (IT-MOSFET) with an inclined side wall field plate is as follows: image 3 shown. Firstly, the device structure sequentially includes along the epitaxial growth direction: drain 101, N + type substrate 102, N - type drift layer 104, P type layer (base region) 107, N + Type source region 108, passivation layer 109; then, the field plate dielectric layer 105 and the sloped sidewall field plate metal 106-1 cover the N - type drift layer 104, the side of the P-type layer (base region) 107, and the outer edge of the upper end surface of the P-type layer (base region) 107; secondly, the source electrode 106-2 covers the P-type layer (base region) 107, N + The upper part of the type source region 108 exposes the end face, and is connected with the inclined sidewall field plate metal 106-1; finally, the inverted trapezoidal gate polysilicon electrode 110 and the inverted trapezoidal gate insulating laye...

Embodiment 2

[0102] Other steps are the same as in Embodiment 1, except that the substrate 102 is made of Si or 4H-SiC, and a buffer layer 103 is epitaxially grown on the substrate 102 with a thickness of 20 nm.

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Abstract

The invention relates to an inverted trapezoidal gate MOSFET device structure with an inclined side wall field plate. The device structure sequentially comprises a drain electrode, an N + type substrate, a buffer layer, an N-type drift layer, a P-type layer, an N + type source region and a passivation layer in the epitaxial growth direction. When the substrate is made of gallium nitride, the device structure is not provided with a buffer layer; according to the device structure, through an inverted trapezoidal gate structure, an inclined mesa structure with a certain inclination angle and an inclined field plate structure which covers the inclined side wall, the depletion width of the drift region is expanded, the source-drain current is reduced, the problem of premature breakdown of the device due to a strong electric field at the bottom of the gate groove is effectively solved, and finally, the reverse breakdown voltage of the power MOSFET is improved so that the power MOSFET is moresuitable for high-voltage operation environment. The device structure is high in operability, low in cost, simple and reliable in process and suitable for industrial application and popularization.

Description

technical field [0001] The invention relates to the field of power electronic devices, in particular to a structure of an inverted trapezoidal gate MOSFET device (IT-MOSFET) with inclined sidewall field plates, specifically to reduce the electric field at the bottom of the grid groove and improve the reverse breakdown voltage. Novel Vertical Metal-Oxide Semiconductor Field-Effect Transistor Structure with Reduced Source-Drain Current. Background technique [0002] With the continuous development of power electronics technology, power semiconductor devices, as an important part of energy conversion, have been widely used in various fields such as industrial production, power system, transportation, national defense, aerospace, new energy systems and daily life. . However, with the continuous improvement of integrated circuit chip integration, the size of the device is also continuously reduced. At the same time, silicon-based devices have reached the limits of their use in ...

Claims

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Application Information

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IPC IPC(8): H01L29/40H01L29/423H01L29/78H01L21/28H01L21/336
CPCH01L29/7827H01L29/404H01L29/4236H01L29/42356H01L29/401H01L29/66666
Inventor 黄福平张勇辉张紫辉
Owner HEBEI UNIV OF TECH