Semiconductor process chamber and semiconductor processing equipment

Abstract

The invention provides a semiconductor process chamber and semiconductor processing equipment. The semiconductor process chamber comprises a chamber body, a bearing device, a bias electrode device, anexcitation electrode device and a rectification structure, the bearing device is located in the chamber body, is arranged below the bias electrode device, comprises a bearing surface arranged downwards, and is used for fixing a wafer on the bearing surface; the bias electrode device is positioned in the chamber body, is arranged on the top wall of the chamber body and is used for providing bias power for the bearing device so as to guide the plasma to the bearing surface; a plurality of gas inlets are formed in the top wall around the bias electrode device, and the excitation electrode deviceis arranged on the side wall of the chamber body and used for exciting process gas entering the chamber body from the gas inlets to form plasmas; the rectification structure is used for changing theflow direction of process gas to guide the plasma to the bearing surface of the bearing device. According to the semiconductor process chamber and the semiconductor processing equipment provided by the invention, the generation of process particles on the wafer can be reduced, so that the process result of the semiconductor process is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor equipment, in particular to a semiconductor process chamber and semiconductor processing equipment. Background technique [0002] Dry etching has important applications in the fields of integrated circuits (Integrated Circuit, IC), discrete devices and advanced packaging, and is a very important process in industrial production. The low-temperature plasma technology is an important basis in dry etching, and generally uses parallel plate capacitors or wound coils to generate plasma in the chamber. [0003] An existing semiconductor etching device based on the principle of winding coils (that is, Inductively Coupled Plasma, ICP mode), is provided with a conical rectifier with an inner diameter gradually decreasing from top to bottom in the reaction chamber, and the rectifier will react The chamber is divided into upper and lower parts, the upper part is used to generate plasma, and th...

AI Technical Summary

Problems solved by technology

[0004]However, in the above-mentioned reaction chamber, due to the gravity, the electromagnetic force of the electric field and the suction direction of the vacuum pump are all downward, which makes the particles produced by the etching reaction Will move down and randomly fall on the surface of the wafer, causing process particles on the surface of the wafer

Images