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Micro-cavity etching substrate containing device and micro-cavity etching system

A technology of holding device and etching system, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as lack of stability and inability to guarantee etching results.

Pending Publication Date: 2020-08-18
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method lacks certain stability and cannot guarantee ideal etching results every time.

Method used

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  • Micro-cavity etching substrate containing device and micro-cavity etching system
  • Micro-cavity etching substrate containing device and micro-cavity etching system
  • Micro-cavity etching substrate containing device and micro-cavity etching system

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Embodiment Construction

[0035] In order to make the above-mentioned purpose, features and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the application. However, the present application can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific implementation disclosed below.

[0036] It can be understood that the terms "first", "second" and the like used in this application may be used to describe various elements herein, but these elements are not limited by these terms. These terms are only used to distinguish a...

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PUM

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Abstract

The invention relates to a micro-cavity etching substrate containing device and a micro-cavity etching system. The micro-cavity etching substrate containing device comprises a base, a substrate placing frame and a rotation control unit, the substrate placing frame is rotatably arranged on the base, a substrate placing groove is formed in the substrate placing frame and is used for placing a substrate material, and the rotation control unit is connected with the wafer placing rack and is used for controlling the wafer placing rack to rotate at a preset rotating speed. When the etching device isused for etching, the micro-cavity etching substrate containing device is placed in an etching cavity, a substrate material to be subjected to xenon fluoride etching is placed in the substrate placing groove, and the rotation control unit is started, so that the substrate material is driven by the substrate placing frame to slowly rotate at a constant speed. The rotation of the substrate materialenables the xenon fluoride gas to more uniformly contact with the micro-cavity being etched, so that the etching roundness of the micro-cavity under low humidity and high xenon fluoride concentrationcan be effectively improved, and the Q value of the ring core micro-cavity is higher.

Description

technical field [0001] The present application relates to the technical field of semiconductor optoelectronic devices, in particular to a microcavity etching substrate holding device and a microcavity etching system. Background technique [0002] The key parameter quality factor Q of the ring-core microcavity is affected by the roundness of its silicon-based support cylinder. In the process of forming silicon-based support pillars, xenon fluoride powder is generally used as a raw material for dry etching, and it is pressurized with nitrogen to uniformly disperse in the circular etching cavity and evenly contact the silicon base. Part of the silicon base is thus etched away to form a silicon base support column. In this process, the roundness of the silicon-based support pillars will be affected by two aspects: the uniformity of the xenon fluoride powder dispersion and the asymmetry of the silicon wafer itself; these two will lead to the support pillars of the ring-core micr...

Claims

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Application Information

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IPC IPC(8): H01L21/687H01L21/67
CPCH01L21/68792H01L21/68785H01L21/67069
Inventor 张靖杨震宁张皖哲关剑卿霍跃施炜
Owner TSINGHUA UNIV
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