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Power semiconductor device package

A device package, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, semiconductor/solid-state device manufacturing, etc., can solve problems such as low impedance

Pending Publication Date: 2020-08-18
SEMICON COMPONENTS IND LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the power capability of such devices can be 10 times (or more) that of silicon devices, this trend presents certain challenges such as manufacturing to allow higher current / power ratings, providing sufficiently low impedance (e.g. inductors) and semiconductor device packages with high heat dissipation

Method used

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  • Power semiconductor device package
  • Power semiconductor device package
  • Power semiconductor device package

Examples

Experimental program
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Embodiment Construction

[0016] The present disclosure is directed to embodiments of semiconductor device packages (and associated manufacturing methods) that can address challenges associated with the trend toward higher power semiconductor devices. For example, the approaches described herein can address the challenges discussed above, eg, can provide semiconductor device packages that allow for higher current / power ratings, provide sufficiently low electrical impedance (eg, inductance), and have high heat dissipation capabilities. For example, the methods described herein may provide for implementing multiple (eg, connected in parallel) power semiconductor devices (eg, power transistors) in a single semiconductor device package. The method described here also allows for double-sided cooling, which can improve thermal performance.

[0017] Additionally, the methods described herein can provide electrical isolation between substrates (eg, multiple substrates) in a semiconductor device package. Such ...

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Abstract

The invention relates to a power semiconductor device package. In a general aspect, an apparatus can include a lead frame. The apparatus can also include a first semiconductor die coupled with a firstside of a first portion of the lead frame, and a second semiconductor die coupled with a second side of the first portion of the lead frame. The apparatus can also include a first substrate coupled with a second side of the first semiconductor die. The first substrate can be further coupled with a first side of a second portion of the lead frame and a first side of a third portion of the lead frame. The apparatus can also further include a second substrate coupled with a second side of the second semiconductor die. The second substrate can be further coupled with a second side of the second portion of the lead frame and a second side of the third portion of the lead frame.

Description

technical field [0001] This specification relates to semiconductor device package equipment. More specifically, the present description relates to semiconductor device packages including a plurality of semiconductor dies with isolated (eg, electrically isolated) double-sided cooling. Background technique [0002] The trend in power semiconductor devices (e.g., for electric vehicles (EV) and / or hybrid electric vehicles (HEV)) is towards higher voltage, higher power devices such as silicon carbide (SiC), arsenic Power semiconductor devices implemented in gallium nitride (GaAs), gallium nitride (GaN), etc. For example in the EV and / or HEV car market. For example, there is a trend to use such power semiconductor devices in powertrain inverters, direct current-direct current (DC-DC) converters and / or on-board chargers (OBC). Since the power capability of such devices can be 10 times (or more) that of silicon devices, this trend presents certain challenges such as manufacturing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/07H01L25/18H01L23/495H01L21/60H01L23/367
CPCH01L25/074H01L25/18H01L23/49503H01L24/81H01L23/367H01L23/3735H01L23/49562H01L23/49531H01L23/4334H01L23/3107H01L21/561H01L2924/181H01L2224/0603H01L2924/00012H01L23/49575H01L23/5385H01L21/56H01L23/49517H01L23/3121
Inventor T·马尔多李根赫J·蒂萨艾尔
Owner SEMICON COMPONENTS IND LLC