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Method for depositing film, application of film and method for forming semiconductor active region

A thin film and carrier technology, applied in the field of semiconductor preparation, can solve problems such as defective devices

Inactive Publication Date: 2020-08-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The seed layer usually uses aminosilane-based gases (diisopropylaminosilane, bis(diethylamino)silane) as the precursor, which leads to the introduction of impurities such as carbon and nitrogen after the formation of the seed layer, resulting in defective devices

Method used

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  • Method for depositing film, application of film and method for forming semiconductor active region
  • Method for depositing film, application of film and method for forming semiconductor active region
  • Method for depositing film, application of film and method for forming semiconductor active region

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Embodiment Construction

[0021] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0022] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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Abstract

The invention relates to a method for depositing a film, application of the film and a method for forming a semiconductor active region. The method comprises the following steps of: depositing a seedcrystal layer on the surface of a carrier, removing impurities, and depositing a film, wherein the impurity removal adopts annealing treatment or remote hydrogen plasma surface treatment in a hydrogenatmosphere. The method can remove carbon and nitrogen impurities and improve the uniformity of the surface of a film.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a method for depositing a thin film and its application, and a method for forming a semiconductor active region. Background technique [0002] With the miniaturization of electronic equipment, DRAM (Dynamic Random Access Memory, DRAM) is an important component. In the active manufacturing process, if the active sidewall oxidation is directly performed after etching the trench, Thinning of the active region will occur, which will lead to poor subsequent processes, such as reduced contact area on the active region. In order to improve this phenomenon, after etching the trench, deposit amorphous silicon, and then perform a subsequent oxidation process to prevent the thinning of the top of the active region. However, if amorphous silicon is used to embed contact holes, lines, etc., the coverage of the amorphous silicon after film formation at the contact hole portion will be...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L21/8242H10B12/00
CPCH01L21/02439H01L21/02532H01L21/0262H01L21/02658H10B12/01
Inventor 李相遇熊文娟蒋浩杰李亭亭
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI