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P-GaN enhanced HEMT device and preparation method thereof

An enhanced, device technology used in the field of microelectronics to solve problems such as poor lattice quality

Active Publication Date: 2020-08-21
西安电子科技大学芜湖研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the problem that the crystal lattice quality of GaN HEMT device is poor at present, provide a kind of HEMT epitaxial structure and preparation method thereof, can improve HEMT Device quality

Method used

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  • P-GaN enhanced HEMT device and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0033] (1) growing a nucleation layer ALN102 on a SiC substrate 101 with a thickness of 100 nm;

[0034] (2) growing an ALGaN buffer layer 103 on the aforementioned steps with a thickness of 600 nm;

[0035] (3) growing a GaN channel layer 104 on the aforementioned steps with a thickness of 2um;

[0036] (4) growing an ALN ​​insertion layer 105 on the aforementioned steps with a thickness of 2 nm;

[0037] (5) growing an ALGaN barrier layer 106 on the aforementioned steps with a thickness of 20 nm;

[0038] (6) growing LTPGaN107 on the aforementioned steps with a thickness of 20nm;

[0039] (7) PGAN108 is grown on the aforementioned steps, with a thickness of 100 nm;

[0040] (8) Electron beam evaporation technology is used for metal deposition on the basis of the foregoing steps. Deposit Ti / Al / Ti / Au metals in sequence, with thicknesses of 20nm / 100nm / 30nm / 120nm respectively, to form source electrode 110 and drain electrode 111, and perform annealing treatment to form ohmic...

Embodiment 2

[0045] (1) growing a nucleation layer ALN102 on a SiC substrate 101 with a thickness of 100 nm;

[0046] (2) growing an ALGaN buffer layer 103 on the aforementioned steps with a thickness of 600 nm;

[0047] (3) growing a GaN channel layer 104 on the aforementioned steps with a thickness of 2um;

[0048] (4) growing an ALN ​​insertion layer 105 on the aforementioned steps with a thickness of 2 nm;

[0049] (5) growing an ALGaN barrier layer 106 on the aforementioned steps with a thickness of 20 nm;

[0050] (6) growing LTPGaN107 on the aforementioned steps with a thickness of 30nm;

[0051] (7) PGAN108 is grown on the aforementioned steps, with a thickness of 100 nm;

[0052] (8) Electron beam evaporation technology is used for metal deposition on the basis of the foregoing steps. Deposit Ti / Al / Ti / Au metals in sequence, with thicknesses of 20nm / 100nm / 30nm / 120nm respectively, to form source electrode 110 and drain electrode 111, and perform annealing treatment to form ohmic...

Embodiment 3

[0057] (1) growing a nucleation layer ALN102 on a SiC substrate 101 with a thickness of 100 nm;

[0058] (2) growing an ALGaN buffer layer 103 on the aforementioned steps with a thickness of 600 nm;

[0059] (3) growing a GaN channel layer 104 on the aforementioned steps with a thickness of 2um;

[0060] (4) growing an ALN ​​insertion layer 105 on the aforementioned steps with a thickness of 2 nm;

[0061] (5) growing an ALGaN barrier layer 106 on the aforementioned steps with a thickness of 20 nm;

[0062] (6) growing LTPGaN107 on the aforementioned steps with a thickness of 40nm;

[0063] (7) PGAN108 is grown on the aforementioned steps, with a thickness of 100 nm;

[0064] (8) Electron beam evaporation technology is used for metal deposition on the basis of the foregoing steps. Deposit Ti / Al / Ti / Au metals in sequence, with thicknesses of 20nm / 100nm / 30nm / 120nm respectively, to form source electrode 110 and drain electrode 111, and perform annealing treatment to form ohmic...

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Abstract

The invention discloses a P-GaN enhanced HEMT device and a preparation method thereof, and belongs to the technical field of semiconductors. The device comprises a substrate (101) an ALN nucleating layer (102), an ALGaN buffer layer (103), a GaN channel layer (104), an ALN insertion layer (105), an ALGaN barrier layer (106), an LTPGaN (107), a PGaN (108), a passivation layer (109), a source electrode (110), a drain electrode (111), and a gate electrode (112) which are sequentially stacked from bottom to top. According to the HEMT device, the low-temperature saturated P-type GaN (LTPGaN layer)grows between the PGaN layer and the barrier layer, and growth of the LTPGaN layer prevents mg of the PGaN layer from diffusing to the channel layer, so that the on-resistance of the device is reduced, and the working efficiency of the HEMT device is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, relates to the epitaxial preparation of semiconductor devices, a P-GaN enhanced HEMT device and its preparation method, and specifically relates to blocking the mg of PGaN from diffusing to the channel layer through a low-temperature saturated P-type layer, thereby reducing the device On-resistance, improve the device efficiency of HEMT. Background technique [0002] The potential advantages of ALGaN / GaN HEMT in terms of high temperature, high pressure, high frequency and high power have attracted widespread attention and made great progress. However, conventional ALGaN / GaN HEMT devices are depletion-type, and a negative gate voltage needs to be applied to turn off the device, which increases the design cost during chip design. Therefore, how to realize enhanced GaN HEMT has always been a difficult point in this field of research. At present, several schemes mainly used to prepare enhan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L21/335H01L29/06
CPCH01L29/7783H01L29/66462H01L29/0603H01L29/0684
Inventor 吴勇陆俊王东陈兴汪琼葛林男严伟伟何滇曾文秀王俊杰操焰崔傲袁珂陈军飞张进成
Owner 西安电子科技大学芜湖研究院