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A preparation method and raw material for wafer growth

A raw material, silicon carbide wafer technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of easy inclusion of carbon powder, low crystal growth rate, etc., to improve productivity, good product quality, and improve particle size The effect of growth rate

Active Publication Date: 2022-06-17
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

However, when using the existing silicon carbide raw materials to grow single crystals, the growth rate of the crystals is usually low, and the crystals are very easy to contain particulate impurities such as carbon powder

Method used

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  • A preparation method and raw material for wafer growth
  • A preparation method and raw material for wafer growth
  • A preparation method and raw material for wafer growth

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Embodiment Construction

[0029] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention, but not to limit the present invention.

[0030] The inventors of the present invention have found after research that among various parameters of the silicon carbide raw material, the particle size is particularly important. The particle size of the silicon carbide raw material has a great influence on the gas phase composition during the growth process. The particle size of the raw material used for the growth of silicon carbide crystals is usually tens of microns to several hundreds of microns. When the number of raw material particles is large, it will not only reduce the crystal growth rate, but also easily lead to defects such as inclusion of carbon powder and other particle impurities in the crystal, whic...

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Abstract

The invention provides a method for preparing silicon carbide wafer growth raw materials, the preparation method comprising: providing initial raw materials, the initial raw materials including carbon powder, silicon powder and silicon carbide powder; heating the initial raw materials, To obtain the silicon carbide wafer growth raw material. In the present invention, the initial raw material of the silicon carbide wafer growth raw material includes silicon carbide powder, which can accelerate the reaction rate of carbon and silicon, increase the particle growth rate of the silicon carbide wafer growth raw material, thereby increasing the growth rate of the raw material. particle volume and increase the yield of SiC wafer growth feedstock. The invention also provides a silicon carbide wafer growth raw material.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for preparing a silicon carbide wafer growth raw material and a silicon carbide wafer growth raw material. Background technique [0002] As a representative material of the third-generation semiconductor, silicon carbide (SiC) single crystal material is widely used in electric vehicles ( xEV), rail transportation (Rail), motor driving (Motor driving) and other fields. [0003] Silicon carbide single crystal materials are usually grown by physical vapor transport (PVT, Physical Vapor Transportprocess) method, and silicon carbide raw materials are used as raw materials for growing single crystals. The parameters of silicon carbide raw materials play an important role in the growth of semiconductor single crystals. , which directly affects the crystalline quality and electrical properties of single crystals. However, when using the existing silicon carbide raw mate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B35/00C30B29/36C01B32/984
CPCC30B35/007C30B29/36C01B32/984
Inventor 焦芳
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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