Automatic control method for polycrystalline silicon reduction furnace

An automatic control and reduction furnace technology, applied in chemical instruments and methods, growth of silicon compounds, polycrystalline materials, etc., can solve the problem of difficult to accurately control the temperature of the reduction furnace, and achieve a smooth increase in radiation heat loss and convective heat loss. The effect of accurate temperature control

Active Publication Date: 2020-08-28
ASIA SILICON QINGHAI +1
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Problems solved by technology

However, the heat loss during the production and operation of the reduction furnace does not increase continuously with the operation time. Especially in the middle and late stages, when the diameter of the silicon rod grows to the set diameter, the rad

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  • Automatic control method for polycrystalline silicon reduction furnace

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Embodiment Construction

[0028] The technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0029] In the description of the present invention, it should be noted that if the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" appear ", etc., the orientation or positional relationship indicated is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientat...

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Abstract

The invention relates to the technical field of polycrystalline silicon production, in particular to an automatic control method for a polycrystalline silicon reduction furnace, which comprises the following steps of: before the reduction furnace operates, inputting a current curve and an ideal temperature curve in an operation period of the reduction furnace into a control system of the reductionfurnace; dividing the operation period of the reduction furnace into a first stage and a second stage which respectively comprise a plurality of time points, and measuring the temperature of a silicon rod in real time at each time point; in the first stage, calculating a first compensation current according to the difference value between the measured actual temperature of the silicon rod at a certain time point and the ideal temperature corresponding to the time point on the ideal temperature curve and the current value corresponding to the time point on the current curve, so that the temperature of the surface of the silicon rod is maintained within a set temperature range; and in the second stage, calculating, by the control system, a second compensation current according to the radiation power change. According to the control method provided by the invention, the temperature of the reduction furnace in the whole production process can be accurately controlled.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to an automatic control method for a polysilicon reduction furnace. Background technique [0002] For a polysilicon reduction furnace of a specific furnace type, polysilicon manufacturers often adjust the operating process parameters in combination with market demand. Generally, under certain ratio, pressure and temperature conditions of silicon-containing gas and reducing gas, the deposition efficiency of elemental silicon is certain, and under sufficient gas transportation conditions, the diameter of silicon rods can maintain a constant growth rate. Joule heat power is equal to the product of the square of the flowing current and the average resistance of the silicon rod conductor (resistivity at each point is related to temperature). As the diameter of the silicon rod increases at a constant speed, the average resistance value of the silicon rod is inversely propor...

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Application Information

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IPC IPC(8): C01B33/027C30B29/06
CPCC01B33/027C30B29/06
Inventor 丁小海宗冰吉红平杨明财王体虎
Owner ASIA SILICON QINGHAI
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