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Semiconductor process equipment and temperature control method thereof

A process equipment and semiconductor technology, applied in semiconductor/solid-state device manufacturing, metal material coating process, ion implantation plating, etc., can solve the problems of low control efficiency and low control accuracy, so as to ensure accuracy and timely adjustment , Improve the effect of temperature control efficiency

Pending Publication Date: 2020-09-04
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the embodiments of the present invention is to provide a semiconductor process equipment and its temperature control method to solve the problems of low control efficiency and low control accuracy existing in the prior art when controlling the temperature of semiconductor process equipment

Method used

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  • Semiconductor process equipment and temperature control method thereof
  • Semiconductor process equipment and temperature control method thereof
  • Semiconductor process equipment and temperature control method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] Such as figure 1 As shown, the embodiment of the present invention provides a temperature control method for semiconductor process equipment. The execution subject of the method may be the controller of the semiconductor process equipment, or the server of the semiconductor process equipment. The server may be an independent server or Can be a server cluster consisting of multiple servers. The method specifically may include the following steps:

[0083] In S102, the actual temperature of the heater in the process chamber of the semiconductor process equipment is detected.

[0084] Take copper interconnection equipment in PVD equipment as an example, such as figure 2 As shown, in this PVD equipment, there can be 4 chambers, including a degassing chamber, a pre-cleaning chamber, a Ta(N) deposition chamber and a Cu deposition chamber, which can be used to perform a heating degassing process ( That is, cleaning process), pre-cleaning process, Ta(N) deposition process a...

Embodiment 2

[0100] Such as Figure 4 As shown, the embodiment of the present invention provides a temperature control method for semiconductor process equipment. The execution subject of the method may be the controller of the semiconductor process equipment, or the server of the semiconductor process equipment. The server may be an independent server or Can be a server cluster consisting of multiple servers. The method specifically may include the following steps:

[0101] In S402, the target temperature of the heater and a preset safety margin are obtained.

[0102] In S404, historical temperature rise data within a preset time is acquired.

[0103] Among them, taking PVD equipment as an example, the preset time can be nearly one month or nearly half a year, etc., and the historical temperature rise data can be the temperature rise in the process chamber when the PVD equipment is heated based on the target temperature.

[0104] For example, in the past three months, when the process se...

Embodiment 3

[0147] The above is the temperature control method for semiconductor process equipment provided by the embodiment of the present invention. Based on the same idea, the embodiment of the present invention also provides a temperature control device for semiconductor process equipment, such as Image 6 shown.

[0148] The temperature control device of the semiconductor process equipment includes: a detection module 601, a determination module 602 and a heating module 603, wherein:

[0149] A detection module 601, configured to detect the actual temperature of the heater in the process chamber of the semiconductor process equipment;

[0150] A determination module 602, configured to determine the temperature range to which the actual temperature belongs, wherein the temperature range includes at least a rapid temperature rise zone, a temperature fine adjustment zone, and a temperature out-of-control zone;

[0151] The heating module 603 is configured to control the heater to perf...

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Abstract

The embodiment of the invention discloses semiconductor process equipment and a temperature control method thereof. The method comprises the following steps of detecting the actual temperature of a heater in a process cavity of the semiconductor process equipment; and determining a plurality of temperature intervals of the actual temperature, wherein the temperature intervals at least comprise a rapid heating area, a temperature fine adjusting area and a temperature out-of-control area, and controlling the heater to heat according to heating policies corresponding to the temperature intervalsof the actual temperature. According to the method, the corresponding heating policies are determined according to the temperature intervals of the actual temperature in the process cavity, so that the temperature control efficiency and the temperature control accuracy of the process cavity can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment, in particular to a semiconductor process equipment and a temperature control method thereof. Background technique [0002] In physical vapor deposition (Physical Vapor Deposition, PVD) equipment, the substrate needs to be heated and degassed in a degassing chamber. The function of this process step is to remove impurities such as water vapor adsorbed by the substrate in the atmosphere in the vacuum system to clean the surface of the substrate and provide a substrate as clean as possible for subsequent processes. In this process step, the heater in the degassing chamber is the main executive component, which determines the quality of the process effect. [0003] The control process for the heater can be as follows: the lower computer sends the temperature setting value to the thermostat, and the thermostat outputs a PWM wave to control the on and off of the relay. When the relay i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/02C23C14/54C23C14/56H01L21/67
CPCC23C14/021C23C14/541C23C14/564H01L21/67248
Inventor 李晓强
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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